ES5A SAMYANG | Alldatasheet

Document overview

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Technical content

Features

  • Ultrafast reverse recovery time
  • Low leakage current
  • Low switching losses, high efficiency
  • High forward surge capability
  • Solder dip 260°C max. 10 s, per JESD 22-B106 Typical Applications For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. Mechanical Data
  • Package: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant
  • Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
  • P olarity: Color band denotes the cathode end ■Maximum Ratings (Ta=25 Unless otherwise specified ） PARAMETER SYMBOL UNIT ES5A ES5B ES5C ES5D ES5F ES5G ES5H ES5J Device marking code ES5A ES5B ES5C ES5D ES5F ES5G ES5H ES5J Repetitive Peak Reverse Voltage VRRM V 50 100 150 200 300 400 500 600 Average Rectified Output Current @60Hz sine wave, Resistance load, Ta (FIG.1) IO 0 . 5 A Forward Surge Current (Non-repetitive) @60Hz Half-sine wave,1 cycle, Ta=25℃ IFSM 0 5 1 A Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature Tj ℃ -55 ~+150 ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT TEST CONDITIONS ES5A ES5B ES5C ES5D ES5F ES5G ES5H ES5J Maximum instantaneous forward voltage drop per diode VF V I FM 7 . 1 3 . 1 5 9 . 0 A 0 . 5 = Maximum reverse recovery time T RR ns IF=0.5A,IR=1.0A, Irr=0.25A 35 Maximum DC reverse current at rated DC blocking voltage per diode IR μA Ta=25℃ 10 Ta=100℃ 500 Typical junction capacit ance Cj pF Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C. 0 4 0 8 All d ata sheet.com

■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT ES5A ES5B ES5C ES5D ES5F ES5G ES5H ES5J Thermal Resistance Junction to ambient RθJ-A ℃/W Junction to lead RθJ-L 12 Junction to case RθJ-c 6.5 Note(1) ■Ordering Information (Example) PREFERED P/N PACKAGE CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE ES5A~ES5J F1 Approximate 0.254 3000 6000 42000 13” reel trr Diagram of circuit and Testing wave form of reverse recovery time -0.25A -1.0A +0.5A 1cm SET TIME BASE FOR 5/10ns/cm (-) (+) (-) (+) 50Ω NONINDUCTIVE 10Ω NONINDUCTIVE PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1) DUT NONINDUCTIV NOTES: 1.Rise Time= 7ns max .I npot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Im pedance=50 Ω www.diode.co.kr 2. All d ata sheet.com

www.diode.co.kr RATINGS AND CHARACTERISTIC CURVES ES5A --- ES5J 8.3毫秒正弦半波 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 100 150 175 Peak Forward Surge Current (A) Number of Cycles FIG.2: Forward Surge Current Capability 0 50 150 ingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length 100 1.0 2.0 3.0 4.0 5.0 Average Forward Output Current (A) Lead Temperature (℃) FIG.1: Io-TL Curve Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) FIG.3: Forward Voltage TJ=25℃ Pulse width=300us 1% Duty Cycle 0.01 0.1 100 1.0 2.01.6 1.8 ES5A-ES5D ES5F-ES5G ES5H-ES5J Tj=100℃ Tj=25℃ 0.001 0.01 0 20 40 60 80 100 0.1 1.0 100 FIG.4: Typical Reverse Characteristics Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current (uA) Tj=125℃ All d ata sheet.com