ES5C

ES5A FS | Alldatasheet

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ES5A ~ ES5J 2014. 10. 28 1/2Revision No : 0 s r e i f i t c e R t n u o M e c a f r u S t s a F r e p u S s e r e p m A 0 . 5 t n e r r u C d r a w r o F s t l o V 0 0 0 1 o t 0 5 e g a t l o V e s r e v e R a t a D l a c i n a h c e M s e r u t a e F s c i t s i r e t c a r a h C l a c i r t c e l E d n a s g n i t a R m u m i x a M Ratings at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% Glass passivated junction chip For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Superfast recovery time for high efficiency Glass passivated chip junction High temperature soldering: 250oC/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-O Cases: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Weight: 0.007 ounce, 0.21 gram Notes 1. Reverse Recovery Test Conditions: IF=0 5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4 0 Volts r e t e m a r a sP l o b m y SS E A 5 S E B 5 S E S E D 5 S E F 5 S E G 5 S E J 5 s t i n U e g a t l o v e s r e v e r k a e p e v i t i t e p e r m u m i x aVM M R R 0 5 0 0 1 0 5 1 0 0 2 0 0 3 0 0 4 0 0 6 ts l o V e g a t l o v S M R m u m i x a VM S M R 5 3 0 7 5 0 1 0 4 1 0 1 2 0 8 2 0 2 4 ts l o V e g a t l o v g n i k c o l b C D m u m i x aVM C D 0 5 0 0 1 0 5 1 0 0 2 0 0 3 0 0 4 600 ts l o V t n e r r u c d e i f i t c e r d r a w r o f e g a r e v a m u m i x a M 1 . g i F e e S I ) V A ( 0 . s5 p m A e l g n i s s m 3 . 8 , t n e r r u c e g r u s d r a w r o f k a e P d a o l d e t a r n o d e s o p m i r e p u s e v a w - e n i s f l a h T @ ) d o h t e M C E D E J (L 0 0 1 =oC I M S F 0 . 0 5 s1 p m A A 0 . 5 @ e g a t l o v d r a w r o f s u o e n a t n a t s n i m u m i x aVM F 5 9 . 30 . 71 . 1 s t l o V t n e r r u c e s r e v e r C D m u m i x a M e g a t l o v g n i k c o l b C D d e t a r t a T @A 5 2 =oC T @A 0 0 1 =oC IR 0 . 0 1 0 0 3 uA uA ) 1 e t o N ( e m i t y r e v o c e r e s r e v e r m u m i x atM r r 5 3 nS ) 2 e t o N ( e c n a t i c a p a c n o i t c n u j l a c i p yCT J 58 pF ) 3 e t o N ( e c n a t s i s e r l a m r e h t l a c i p y TRθ A J Rθ L J 7 4 2 1 o W / C e g n a r e r u t a r e p m e t n o i t c n u j g n i t a r e pTO J 0 5 1 + o t 5 5 - oC e g n a r e r u t a r e p m e t e g a r o tTS G T S 0 5 1 + o t 5 5 - oC

ES5A ~ ES5J 2014. 10. 28 2/2Revision No : 0 RATINGS AND CHARACTERISTIC CURVES ES5A THRU ES5J 5.0 4.0 3.0 2.0 1.0 0 25 50 75 100 125 150 175 150 120 0.1 1.0 10 100 0.01 0.1 1 10 100 100 0.1 REVERSE VOLTAGE,VOLTS t,PULSE DURATION,sec. FIG. 5-TYPICAL JUNCTION CAPACITANCE FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS NUMBER OF CYCLES AT 60 Hz FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG. 1- FORWARD CURRENT DERATING CURVE , T N E R R U C D E I F I T C E R D R A W R O F E G A R E V A S E R E P M AD R A W R O F S U O E N A T N A T S N I S E R E P M A , T N E R R U C F p , E C N A T I C A P A C N O I T C N U J , T N E R R U C E G R U S D R A W R O F K A E P S E R E P M A INSTANTANEOUS FORWARD VOLTAGE, VOLTS Single Phase Half Wave 60Hz Resistive or inductive Load 1 10 100 TJ=25 C 100 200 0 20 40 60 80 100 1,000 100 0.1 0.01 TJ=100 C TJ=25 C PERCENTAGE OF PEAK REVERSE VOLTAGE,% FIG. 4-TYPICAL REVERSE CHARACTERISTICS , T N E R R U C E S R E V E R S U O E N A T N A T S N I S E R E P M A O R C I M , E C N A D E P M I L A M R E H T T N E I S N A R T W / C AMBIENT TEMPERATURE, C 0.01 0.1 ES5A-ES5D ES5E-ES5J TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)