ES5ABF ZSELEC | Alldatasheet
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! Gl as s Passivated Die Construction ! Low Forward Voltage Drop, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical Da ta ! Te rminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Weight: 0.057 grams (approx.) ! Lead Free: For RoHS / Lead Free Version Maximum Rat ings and Electrical Characteristics @TA=25°C unl ess otherwise specified Peak Repet itive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 300 400 600 V RMS Revers e Voltage VR(RMS) 35 70 105 140 210 280 420 V Average Rec tified Output Current @T L = 100°C IO 5.0 A Non-Repeti t ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 135 A Forward Vo ltage @I F = 5. 0A V FM 0.95 1.25 1.7 V P e ak R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 5.0 100 µA Reverse Rec o very Time (Note 1) trr 35 nS Ty pi cal Junction Capacitance (Note 2) Cj 95 pF Ty pi cal Thermal Resistance (Note 3) R/G01JL 45 °C/ W Operati ng and S torage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. M easured with IF = 0.5A, IR = 1. 0A, Irr = 0. 25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 1 of 2 ES5 ABF – ES5 JBF Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com A B C DF E G ES5 CBF ES5 DBF ES5 EBF ES5 GBF ES5 JBF SMBF 4.404.20 3.703.50 Dim Min Max A B C D E F G All D imensions in mm 0.260.18 5.505.10 1.301.10 1.00 - 2.201.90 Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 0.01 0.1 1.0 0 0.2 0.4 I , INST ANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FOR WARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 25 C Pulse width = 300 s j ° m 50V DC Approx 50 NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 100 1 10 100 C , CAP ACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25 C f = 1.0MHz j ° - - 2.0 3.0 25 75 10050 125 150 175 I , A VERAGE RECTIFIED CURRENT (A) O T , TERMINAL TEMPERATURE ( C) Fi . 1 Forward Current Deratin Curve T ° 4.0 5.0 1 10 100 I , PEAK FORWARD SURGE CURRENT (A) FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Surge Current Derating Curve Single Half-Sine-Wave (JEDEC Method) 100 120 140 Singlephasehalfwave ResistiveorInductiveload ES5ABF-ES5DBF ES5EBF-ES5GBF ES5JBF ES5 ABF – ES5 JBF ES5 ABF – ES5 JBF Alldatasheet