ES5ABF_V01 CHENDA | Alldatasheet
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The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage B uilt-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250°C/10 seconds at terminals Glass passivated chip junction Case : JEDEC SMBF Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.002 ounce, 0.055 grams Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Maximum Ratings And Electrical Characteristics Dimensions in inches and (millimeters) SMBF 0.216(5.50) 0.200(5.10) 0.048(1.20) 0.031(0.80) 0.010(0.26) 0.007(0.18) 0.051(1.30) 0.043(1.10) 0.173(4.40) 0.165(4.20) 0.086 (2.20) 0.075 (1.90) 0.146(3.70) 0.138(3.50) Parameter SYMBOLS ES5ABF ES 5BBF ES 5DBF ES 5GBF ES 5JBF UNITSMarking Code MDD ES5ABF MDD ES5BBF MDD ES5DBF MDD ES5GBF MDD ES5JBF Maximum repetitive peak reverse voltage VRMM 50 100 200 400 600 V Maximum RMS voltage VRMS 35 70 140 280 420 V Maximum DC blocking voltage VDC 50 100 200 400 600 V Maximum average forward rectified current at TL=55℃ I(AV) 5.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 150 A Maximum instantaneous forward voltage at 5.0A VF 1 1.25 1.70 V TA=25℃Maximum DC reverse current at rated DCblocking voltage TA=125℃ IR 5.0 100.0 μA Maximum reverserecovery time (NOTE 1) trr 35 ns Typical junction capacitance (NOTE 2) CJ 35.0 pF Typical thermal resistance (NOTE 3) RJA 40.0 ℃/W Operating junction and storage temperature range TJ,TSTG - 5 5t o+ 1 5 0 ℃ Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 3.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 4.The typical data above is for referenceonly.
Rev:2019A0 Page :2 Ratings And Characteristic Curves https://www.microdiode.com Reverse Voltage - 50 to 600 Volts Forward Current - 5.0 Ampere The curve above is for reference only. ES5ABF THRU ES5JBF Fig.3 Typical Reverse Characteristics IR- Reverse Current ( μA) 20 100600 0.1 1.0 100 40 80 300 TJ=25°C TJ=75°C TJ=125°C Noninductive 25Vdc approx D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note：1 .Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Sourc e I mpedance = 50 ohms. -0.25 -1.0 +0.5 50 ohm trr 10ns/div Set time Base for 10ns/div Case Temperature (°C) Junction Capacitance (pF) 1.0 10 1000.1 100 Reverse Voltage (V) TJ=25°C % of PIV.VOLTS Fig.5 Typical Junction Capacitance TJ=25°C f = 1.0MHz Vsig = 50mV p-p 25 50 75 100 125 150 175 Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating Single phase half-wave 60 Hz resistive or inductive load Fig.4 Typical Forward Characteristics 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) TJ=25°C ES5JBF ES5EBF/WS5GBF ES5ABF~ES5DBF 100 125 175 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) Number of Cycles 150 8.3 ms Single Half Sine Wave (JEDEC Method)
https://www.microdiode.com Rev:2019A0 Page :3 Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). Suggested Pad Layout E B d F W PA D D1D2 C T Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing Reverse Voltage - 50 to 600 Volts Forward Current - 5.0 Ampere ES5ABF THRU ES5JBF Item Tolerance SMBF Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width P E B C d F T W P A D D Symbol 0.1 0.1 0.1 min 0.5 0.1 0.3 1.0 0.1 0.05 0.1 0.1 0.1 0.1 2.0 unit:mm 1 . 50 330.00 50.00 13.00 1.75 5.50 4.00 4.00 2.00 0.30 12.00 3.81 5.61 .60 12. 30W1Reel width SMBF 13" 5,000 4.0 10,000 190*190*41 330 365* 365* 360 80,000 14.0 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(mm)(mm)(mm)(pcs)(mm)(pcs) 0.118 0.260 Symbol Unit (mm) A C D 0.071 6.6 3.0 E B Unit (inch) 0.189 1.8 0.1002.54 4.8