ES3A

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@ T A = 25/c176C unless otherwise specified /c183 /c183 /c183 /c183 /c183 Mechanical Data /c183 /c183 /c183 /c183 1of2 SMC Dim Min Max A 5.59 6.22 B 6.60 7.11 C 2.75 3.18 D 0.15 0.31 E 7.75 8.13 G 0.10 0.20 H 0.76 1.52 J 2.00 2.62 All Dimensions in mm A B C D GH E J Plastic package has underwrites laboratory flammability Classification 94V-0 Glass passivated chip junction Built-in strain relief, Fast switching speed for high efficiency High temperature soldering guaranteed: Case: JEDED DO-214AB transfer molded plastic Terminals: Solder plated, solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Weight: 0.007 ounce, 0.25 gram /c183

• Single phase, half wave, 60Hz, resistive or inductive load.
• For capacitive load derate current by 20%. ES3A-ES3J SYMBOLS ES3A ES3B ES3C ES3D ES3E ES3G ES3J UNIT Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 Volts Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 Volts Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 Volts Maximum Average Forward Rectified Current at TL=100 I(AV) 3.0 Amps Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 100 Amps Maximum Instantaneous Forward Voltage @ 3.0A VF 0.95 1.25 1.7 Volts TA = 25 5.0 Maximum DC Reverse Current at rated DC Blocking Voltage per element TA = 125 IR 300 A Typical Reverse Recovery Time Test conditions IF =0.5A, IR =1.0A, IRR =0.25A trr 35 nS Typical Junction Capacitance (Measured at 1.0MHz and applied reverse voltage of 4.0 V) CJ 45 30 pF RθJA 55 Typical Thermal Resistance (Note 1) RθJL 17 /W Operating Junction Temperature Range TJ (-55 to +150) Storage Temperature Range TSTG (-55 to +150) Notes: 1. Thermal resistance from Junction to ambient and from junction to lead mounted on P.C.B. with

FIG.2-MAXIMUM NON-REPETITIVE PEAK 100 T jmax 402010 CHARACTERISTICS 150 CURRENT, (A) PEAK FORWARD SURGE NUMBER OF CYCLES AT 60 Hz 8.3ms Single Half Sine-Wave (JEDEC Method) T = FORWARD SURGE CURRENT FIG.4-TYPICAL REVERSE DERATING CURVE FIG.1-TYPICAL FORWARD CURRENT 150 17512575 100 2.0 Single Phase Inductive or Half Wave Resistive Load AVERAGE FORWARD CURRENT, (A) FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AMBIENT TEMPERATURE, ( JT =25 8040 100 (μA) 1.2 JT =25 C 0.80.4 Duty Cycle Pulse Width=300us (A)(A) 1000 100 INSTANTANEOUS FORWARD VOLTAGE,(V) FIG.5-TYPICAL JUNCTION CAPACITANCE 0.1 REVERSE VOLTAGE,(V) Vsig=50mVp-p JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT, INSTANTANEOUS REVERSE CURRENT, 1.6 0.375″(9.5mm) Lead Length f=1MHz T =25 C 4 68 Cycle 1.0 1.0 10 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) J 1.0 0.1 0.1 0.01 0.001 1.0 3.0 100 0.6 1.0 1.4 1.8 60200 120 140 T =125 CJ -1.0A -0.25A +0.5A (+) (-) (-) (approx.) (+) Vdc 10Ω NONINDUCTIVENONINDUCTIVE 50Ω (NOTE OSCILLOSCOPE (NOTE GENERATIOR PULSED.U.T. INDUCTIVE NON 2.Rise time=10ns max. Source Impedance= 50 ohms 1 megohm. 22pF NOTES : 1.Rise Time=7ns max. Input Impedance= REVERSE RECOVERY TIME CHARACTERISTIC F1G.6-TEST CIRCUIT DIAGRAM AND 1cm TRR 0.01 j ES3J ES3E-3G ES3A-3D ES3A-ES3D ES3E-ES3J 60Hz 50/100ns/cm SET TIME BASE FOR 2of2