ES2AW CHENDA | Alldatasheet
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SURFACE MOUNT SUPER FAST RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere Case: JEDEC SOD-123FL molded plastic body over passivated chip Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0007 ounce, 0.02 grams Glass passivated device Ideal for surface mouted applications
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SYMBOLS UNITS Metallurgically bonded construction High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension Low reverse leakage 100 100 400 280 400 150 105 150 600 420 600 VOLTS VOLTS VOLTS Amp Amps Volts VRRM VRMS VDC I(AV) IFSM VF 2.0 50.0 1.25 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at2.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C IR 5.0 100.0 Aµ Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. ES2AW THRU ES2JW ES2CW ES2DW ES2EW ES2JW 2E2 2E3 2E4 2E5 2E82E6 ES2GW Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) CJ pF Operating junction and storage temperature range Note: RθJA TJ,TSTG -55 to +150 C Typical thermal resistance (NOTE 3) °C/W 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 1.Measured with IF=0.5A, IR=1A, Irr=0.25A. 35 ns 2E1 ES2AW trr 200 140 200 300 210 300 0.95 1.7 SOD-123FL 1.0 0.2 2.8 0.1 1.8± 0.1 Cathode Band Top View 3.7 0.2 0.6 0.25 1.1± 0.15 0.10-0.30 Dimensions in millimeters MDD Catalog Number at Ta=65°C
RATINGS AND CHARACTERISTIC CURVES ES2AW THRU ES2JW 50 ohm Noninductive 25Vdc approx D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div 0.4 0.8 1.2 1.6 2.0 2.4 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Lead Temperature (°C) Fig.2 Maximum Average Forward Current Rating Fig.3 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T =25J °C T =75J °C T =125J °C Single phase half wave resistive or inductive P.C.B mounted on Fig.4 Typical CharacteristicsForward 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) T =25J °C ES2JW ES2EW/WS2GW ES2AW~ES2DW Fig.5 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) 1 1000.1 T =25J °C f = 1.0MHz V = 50mVsig p-p The cruve g ra p h is for reference onl y , can't be the basis for j ud g ment 曲线图仅供参考