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SURFACE MOUNT SUPERFAST RECOVERY RECTIFIERS Forward Current-2A Reverse Voltage-50V to 600V  Case: SMBF molded plastic body  Terminals: Solderable per MIL-STD-750， Method 2026  Weight: Approximated 0.057 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derating by 20 %. PARAMETER SYMBOL ES2ABF -3- ES2BBF -3- ES2CBF -3- ES2DBF -3- ES2EBF -3- ES2GBF -3- ES2JBF -3- UNIT Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at TC=125℃ IF(AV) 2.0 A Peak Forward Surge Current (Note1) IFSM 50 A Maximum Forward Voltage at 2.0 A VF 1 1.25 1.68 V Maximum DC Reverse Current at Rated DC Blocking Voltage at TA=25℃ TA=125℃ IR 100 uA Typical Junction Capacitance at VR=4V,f=1MHz CJ 28 p F Maximum Reverse Recovery Time (Note2) T rr 35 n S Typical Thermal Resistance (Note3) RθJA RθJC 18 ℃/W Operating and Storage Temperature Range TJ,TSTG -55 to +150 ℃ Notes: 1. Measured at 8.3 ms single half sine wave superimposed on rated load (JEDEC Method). 2. Measured with IF=0.5A, IR=1A, Irr=0.25A. X 2.0" (5 X 5 cm) copper pad areas.

FEATURES

 For surface mount applications  Glass passivated chip junction  Low profile package  Superfast reverse recovery time  Lead free in comply with EU RoHS2011/65/EU directives MECHANICAL DATA PIN DESCRIPTION

1 Cathode

2 Anode

1 / 3www.pingjingsemi.com Revision:1.0 Oct-2017

RATINGS AND CHARACTERISTIC CURVES ESABF-PJ thru ESJBF-PJ 2 / 3www.pingjingsemi.com Revision:1.0 Oct-2017 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surge Current Peak A)Forward Surge Current ( Number of Cycles Fig.3 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T =25J °C T =75J °C T =125J °C Fig.4 Typical CharacteristicsForward 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) T =25J °C 50 ohm Noninductive 25Vdc approx D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div 0.5 1.0 1.5 2.0 2.5 3.0 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (°C) Fig.2 Maximum Average Forward Current Rating Single phase half-wave 60 Hz resistive or inductive load 8.3 ms Single Half Sine Wave (JEDEC Method) JunctionCapacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T =25J °C Fig.5 Typical Junction Capacitance T=25J °C f = 1.0MHz Vsig = 50mV p-p ES2JBF-PJ ES2EBF-PJ/ES2GBF-PJ ES2ABF-PJ~ES2DBF-PJ

4.20 4.40 5.10 5.50 1.90 2.20 3.50 3.70 0.18 0.26 1.10 1.30 Device Package Shipping ES2ABF-PJ thru ES2JBF-PJ SMBF 5,000/Tape & Reel (13 inches) PACKAGE OUTLINE Dimensions in milimeters SMBF

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www.pingjingsemi.com / 3 Revision:1.0 Oct-2017