ES2DA-T TSC | Alldatasheet
Document overview
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Technical content
ES2DA-T – ES2JA-T Taiwan Semiconductor
1 Version: C2102
2A, 200V - 600V Super Fast Surface Mount Rectifier
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low reverse leakage
- Moisture sensitivity level: level 1, per J-STD-020
- RoHS Compliant
- Halogen-free according to IEC 61249-2-21
APPLICATIONS
- DC to DC converter
- Switching mode converters and inverters
- Freewheeling application MECHANICAL DATA
- Case: DO-214AC (SMA)
- Molding compound meets UL 94V-0 flammability rating
- Terminal: Matte tin plated leads, solderable per J-STD-002
- Meet JESD 201 class 1 whisker test
- Polarity: Indicated by cathode band
- Weight: 0.060g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT IF 2 A VRRM 200 - 600 V IFSM 50 A TJ MAX 150 °C Package DO-214AC (SMA) Configuration Single die DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL ES2DA-T ES2GA-T ES2JA-T UNIT Marking code on the device ES2DA ES2GA ES2JA V Repetitive peak reverse voltage VRRM 200 400 600 V Reverse voltage, total rms value VR(RMS) 140 280 420 V Forward current IF 2 A Surge peak forward current, single half sine-wave superimposed on rated load t = 8.3ms IFSM 50 A t = 1.0ms 124 A Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C
ES2DA-T – ES2JA-T Taiwan Semiconductor
2 Version: C2102
Junction-to-lead thermal resistance RӨJL 14 °C/W Junction-to-ambient thermal resistance RӨJA 86 °C/W Junction-to-case thermal resistance RӨJC 23 °C/W Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage(1) ES2DA-T IF = 1A, TJ = 25°C VF 0.83 - V IF = 2A, TJ = 25°C 0.91 0.95 V IF = 1A, TJ = 125°C 0.69 - V IF = 2A, TJ = 125°C 0.78 0.91 V ES2GA-T IF = 1A, TJ = 25°C 0.97 - V IF = 2A, TJ = 25°C 1.09 1.25 V IF = 1A, TJ = 125°C 0.78 - V IF = 2A, TJ = 125°C 0.92 1.05 V ES2JA-T IF = 1A, TJ = 25°C 1.23 - V IF = 2A, TJ = 25°C 1.44 1.70 V IF = 1A, TJ = 125°C 0.92 - V IF = 2A, TJ = 125°C 1.12 1.26 V Reverse current @ rated VR (2) TJ = 25°C IR - 5 µA TJ = 125°C - 100 µA Reverse recovery time IF = 0.5A, IR = 1.0A Irr = 0.25A trr - 35 ns Junction capacitance ES2DA-T 1MHz, VR = 4.0V CJ 26 - pF ES2GA-T 19 - pF ES2JA-T 11 - pF Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms
ORDERING INFORMATION
ORDERING CODE(1) PACKAGE PACKING ES2xA-T DO-214AC (SMA) 7,500 / Tape & Reel Notes: 1. “x” defines voltage from 200V(ES2DA-T) to 600V(ES2JA-T)
ES2DA-T – ES2JA-T Taiwan Semiconductor
3 Version: C2102
(TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics Fig.5 Typical Reverse Characteristics Fig.6 Typical Forward Characteristics 25 50 75 100 125 150 100 1000 1 10 100 f=1.0MHz Vsig=50mVp-p ES2DA-T ES2GA-T ES2JA-T 0.00001 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=-55°C TJ=150°C 0.1 Pulse width 300μs 1% duty cycle Pulse width 300μs 1% duty cycle TJ=-55°C TJ=150°C TJ=125°C TJ=25°C 0.00001 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=-55°C TJ=150°C 0.1 Pulse width 300μs1% duty Pulse width 300μs 1% duty cycle TJ=25°C TJ=125°C TJ=-55°C TJ=150°C CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) AVERAGE FORWARD CURRENT (A) REVERSE VOLTAGE (V) LEAD TEMPERATURE (°C) INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) ES2DA-T ES2DA-T ES2GA-T ES2GA-T
ES2DA-T – ES2JA-T Taiwan Semiconductor
4 Version: C2102
(TA = 25°C unless otherwise noted) Fig.7 Typical Reverse Characteristics Fig.8 Typical Forward Characteristics Fig.9 Typical Transient Thermal Impedance 0.0001 0.001 0.01 0.1 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=-55°C TJ=150°C 0.1 Pulse width 300μs 1% duty cycle Pulse width 300μs 1% duty cycle TJ=25°C TJ=125°C TJ=-55°C TJ=150°C 0.001 0.01 0.1 100 PULSE DURATION (s) TRANSIENT THERMAL IMPEDANCE (°C/W) INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) ES2JA-T ES2JA-T
ES2DA-T – ES2JA-T Taiwan Semiconductor
5 Version: C2102
PACKAGE OUTLINE DIMENSIONS DO-214AC (SMA) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code
ES2DA-T – ES2JA-T Taiwan Semiconductor
6 Version: C2102
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