ES2F-M3 VISHAY | Alldatasheet
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ES2F-M3, ES2G-M3 www.vishay.com Vishay General Semiconductor Revision: 19-Feb-15 1 Document Number: 89484 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Ultrafast Plastic Rectifier
FEATURES
- Glass passivated pellet chip junction
- Ideal for automated placement
- Ultrafast reverse recovery time
- Low switching losses, high efficiency
- High forward surge capability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication. MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 300 V, 400 V IFSM 50 A trr 35 ns VF 1.1 V TJ max. 150 °C Package DO-214AA (SMB) Diode variations Single die DO-214AA (SMB) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ES2F ES2G UNIT Device marking code EF EG Maximum repetitive peak reverse voltage VRRM 300 400 V Working peak reverse voltage VRWM 225 300 V Maximum RMS voltage VRMS 210 280 V Maximum average forward rectified current at TL = 110 °C I F(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I FSM 50 A Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
ES2F-M3, ES2G-M3 www.vishay.com Vishay General Semiconductor Revision: 19-Feb-15 2 Document Number: 89484 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Note (1) Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL ES2F ES2G UNIT Maximum instantaneous forward voltage 2.0 A V F (1) 1.1 V Maximum reverse current at VRRM TA = 25 °C IR µA TA = 100 °C 200 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 35 ns Maximum reverse recovery time IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM trr 50 ns Maximum reverse recovery current IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM IRM 3.0 A Maximum stored charge IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V, Irr = 0.1 IRM Qrr 50 nC Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ES2F ES2G UNIT Maximum thermal resistance R JA (1) 75 °C/W RJL (1) 25 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ES2G-M3/52T 0.096 52T 750 7" diameter plastic tape and reel ES2G-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
ES2F-M3, ES2G-M3 www.vishay.com Vishay General Semiconductor Revision: 19-Feb-15 3 Document Number: 89484 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Fig. 5 - Reverse Switching Characteristics Fig. 6 - Typical Junction Capacitance 3.0 80 90 100 110 120 130 140 150 2.0 1.0 Resistive or Inductive Load Average For ward Rectified C urrent (A) Lead Temperature (°C) 1 100 10 8.3 ms Single Half Sine-Wave at TL = 110 °C Peak For ward S urg e C urrent (A) Number of Cycles at 60 Hz TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 25 °C 100 0.1 0.01 Instantaneo us For ward C urrent (A) Instantaneous Forward Voltage (V) TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 25 °C Percent of Rated Peak Reverse Voltage (%) 02 0 4 0 6 0 80 100 1000 100 0.1 Instantaneo us Re verse Leakage Current ( µA) 25 50 75 100 125 150 175 120 160 200 trr Qrr at 5 A, 50 A/µs at 2 A, 20 A/µs at 5 A, 50 A/µs at 2 A, 20 A/µs at 1 A, 100 A/µs at 1 A, 100 A/µsReco vered Stor ed Charge/ Re verse R eco very Time nC/n s Junction Temperature (°C) 100 0.1 1 10 100 1000 Reverse Voltage (V) Junction Capaci tance (pF) TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p
ES2F-M3, ES2G-M3 www.vishay.com Vishay General Semiconductor Revision: 19-Feb-15 4 Document Number: 89484 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Cathode Band DO-214AA (SMB) 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.084 (2.13) Mounting Pad Layout 0.086 (2.18) MIN. 0.060 (1.52) MIN. 0.085 (2.159) MAX. 0.220 (5.59) REF.
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