ES2A-SMB YFWDIODE | Alldatasheet
Document overview
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Technical content
Features
ƽ Glass passivated chip junction ƽ Ideal for automated placement ƽ Ultrafast reverse recovery time for high efficiency ƽ Low profile package ƽ High forward surage capability ƽ High temperatrue soldering˖ 260ć/10 seconds at terminals ƽ Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC Mechanical Date ƽ Case: JEDEC DO-214AAmolded plastic body over passivated chip ƽ Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D ƽ Polarity: Laser band denotes cathode end Maximum Ratings & Thermal Characteristics & Electrical Characteristics (TA = 25 °C unless otherwise noted) Symbol (ES2A) (ES2B) (ES2D) (ES2G) (ES2J) UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 V Maximum RMS voltage VRMS 35 70 140 280 420 V Maximum DC blocking voltage VDC 50 100 200 400 600 V Maximum average forward rectified current IF(AV) 2 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 60 A Maximum instantaneous forwad voltage at 2.0A VF 0.95 1.30 1.70 V Maximum DC reverse current TA = 25 ć at Rated DC blocking voltage TA = 100ć IR 5.0 μA 50 μA Maximum reverse recovery time at IF = 0.5 A , IR = 1.0 A , Irr = 0.25 A trr 35 nS Typical junction capacitance at 4.0 V ,1MHz CJ 18 p F Typical thermal resistance RșJA 75 ć/ W Operating junction and storage temperature range TJ, TSTG –55 to +150 ć
Super Fast recovery rectifiers Characteristic Curves (TA=25 ćć unless otherwise noted) (ES2A~ES2J)SMB