ES2AW ZSELEC | Alldatasheet
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! Low F orward Voltage Drop, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical Da ta ! T erminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum Rat ings and Electrical Characteristics @TA=25°C unl ess otherwise specified Peak Repet itive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Revers e Voltage VR(RMS) Av erage Rec tified Output Current @T a = O 1.0 A Non-Repetit ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM Forward Vol tage @I F = 2.0A VFM P e ak R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 100 µA Typi cal Junction Capacitance (Note 2) Cj Typi cal Thermal Resistance (Note 3) R/G01JL Operating and S torage Temperature Range Tj, TSTG Note: 1. M easured with IF = 0.5A, IR = 1. 0A, Irr = 0. 25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 1 of 2 1.00.2 2.80.1 1.9± 0.1 Cat hode Band Top View 3.70.2 0.60.25 1.4± 0. 0.10-0.30 SOD - 123FL Dimensions in millimeters Glass passivated device! ES2AW UNITS Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com rr 1.0 1.3 1.7 ES2CW ES2DW ES2EW ES2GWES2HWES2JW Alldatasheet
/G01/G01 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com ES2AW – ES2JW ES2AW – ES2JW 0.01 0.1 1.0 0 0.2 0.4 I , INSTANT ANEOUS FORWARD CURRENT (A)F V , INSTANT ANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 25 C Pulse width = 300 s j ° m 50V DC Approx
50 NI (Non-inductive)W 10
1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise T ime = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 02 5 5 0 75 100 125 150 175 I , A VERAGE FWD RECTIFIED CURRENT (A)(AV) T,LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve L ° Singlephasehalfwave ResistiveorInductiveload -ES2AW-ES2DW -ES2EW-ES2GW ES2JW 1.0 2.0 1 10 100 R O F K A E P , I ) A ( T N E R R U C E G R U S D R A W M S F NUMBER OFCYCLES AT 60Hz Fig. 3 Surge Current Derating Curve Single Half-Sine-Wave (JEDEC Method) 0.1 1.0 100 1000 0 40 80 120 ( T N E R R U C E S R E V E R S U O E N A T N A T S N I , I ) A R µ PERCENT OFRA TED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics T = 125 Cj ° T = 25 Cj ° Alldatasheet