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SURFACE MOUNT SUPERFAST RECOVERY RECTIFIERS Reverse Voltage:50 to 600 V Forward Current:2.0A
FEATURES
For surface mount applications Glass passivated chip junction Low profile package Superfast reverse recovery time Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: SMAF mold plastic body Terminals: Solderable per MIL-STD-750, Method 2026 Weight: Approximated 0.027 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derated by 20 %. PARAMETER SYMBOLS ES2AF -PJ ES2BF -PJ ES2CF -PJ ES2DF -PJ ES2EF -PJ ES2GF -PJ ES2JF -PJ UNITS Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at TC=125℃ IF(AV) 2.0 A Peak Forward Surge Current Note 1 IFSM 50 A Max Instantaneous Forward Voltage at 2 A VF 1 1.25 1.68 V Maximum DC Reverse Current T A = 25℃ at Rated DC Reverse Voltage T A =125℃ IR 100 μA Typical Junction Capacitance Note 2 CJ 30 pF Maximum Reverse Recovery Time Note3 Trr 35 ns Typical Thermal Resistance Note 4 RθJA RθJC ℃/W Operating and Storage Temperature Range TJ, TSTG -55 ~ +150 ℃ Note: 1. 8.3ms Single half sine-wave superimposed on rated load (JEDEC method). 2. Measured at 1MHz and applied reverse voltage of 4 V D.C. 3. Measured at with IF=0.5A, IR=1A, Irr=0.25A PIN DESCRIPTION
1 Cathode
2 Anode
Simplified outline SMAF and symbol ES2AF-PJ thru ES2JF-PJ 1 / 3www.pingjingsemi.com Revision:1.0 Oct-2017
Fig.6 Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) Number of Cycles Fig.3 Typical Reverse Characteristics IR- Reverse C urrent ( μA) 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 TJ=25°C TJ=75°C TJ=125°C Fig.4 Typical Forward Characteristics 2.50 0.01 0.1 1.0 0.001 Instaneous Forward Current (A)0.5 1.0 1.5 2.0 Instaneous Forward Voltage (V) TJ=25°C ES2JF-PJ ES2EF-PJ~ES2GF-PJ 50 ohm Noninductive 25Vdc approx D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div 3.0 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (°C) Fig.2 Maximum Average Forward Current Rating 8.3 ms Single Half Sine Wave (JEDEC Method) Junction Capacitance (pF) 1000.1 100 1.0 10 Reverse Voltage (V) TJ= 25°C Fig.5 Typical Junction Capacitance TJ=25°C f = 1.0MHz Vsig = 50mVp-p ES2AF-PJ~ES2DF-PJ RATINGS AND CHARACTERISTIC CURVES ES2AF-PJ thru ES2JF-PJ 2 / 3www.pingjingsemi.com Revision:1.0 Oct-2017
P ACKAGE OUTLINE RECOMMEND MOUNTING PAD SIZE
ORDERING INFORMATION
ES2AF-PJ thru ES2JF-PJ SMAF 000/ Ta pe & Reel (7 inches) SMAF 2.2 (86) 1.6 (63) 1.6 (63) Unit mm （mil） 10,000/ Tape & Reel (13 inches) ES2AF-PJ thru ES2JF-PJ 3 / 3www.pingjingsemi.com Revision:1.0 Oct-2017