ES2AF YFWDIODE | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
SSuurrffaaccee MMoouunntt SSuuppeerrffaasstt RReeccoovveerryy RReeccttiiffiieerr RReevveerrssee VVoollttaaggee –– 5500 ttoo 660000 VV FFoorrwwaarrdd CCuurrrreenntt ––22 AA PPIINNNNIINNGG PIN
DESCRIPTION
Marking Code: ES2AF~ES2JF: ES2A~ES2J Simplified outline SMAF and symbol MECHANICAL DATA
- Terminals: Solderable per MIL-STD-750, Method 2026
- pprox. Weight: 27m g 0.00086oz Case: SMAF A Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 2A PPaarraammeetteerr Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at TL = 100 °C Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta =125 °C Typical Junction Capacitance at V =4V, f=1MHzR VRRM VRMS VDC IF(AV) IFSM VF IR Cj T, Tj stg 50 100 150 200 300 400 600 V 35 70 105 140 210 280 420 V V 100 -55 ~ +150 A A V μA ns SSyymmbboollss Ratings at ambient temperature unless otherwise specified. Sin gle phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 25 °C AAbbssoolluuttee MMaaxxiimmuumm RRaattiinnggss aanndd CChhaarraacctteerriissttiiccss Maximum Reverse Recovery Time at I =0.5A, I =1A, I =0.25AFR rr trr pF EESS22AAFF EESS22BBFF EESS22CCFF EESS22DDFF EESS22EEFF EESS22GGFF EESS22JJFF UUnniittss 50 100 150 200 300 400 600 1.25 1.7 1 2 EESS22AAFF TTHHRRUU EESS22JJFF
FEATURES
For surface mounted applications
- Low profile package
- Glass Passivated Chip Juntion
- Superfast reverse recovery time
- Lead free in comply with EU RoHS 2011/65/EU directives
D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note ：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. FFiigg..11 RReevveerrssee RReeccoovveerryy TTiimmee CChhaarraacctteerriissttiicc AAnndd TTeesstt CCiirrccuuiitt DDiiaaggrraamm FFiigg..44 TTyyppiiccaall CChhaarraacctteerriissttiiccssFFoorrwwaarrdd 1.2 1.4 FFiigg..55 TTyyppiiccaall JJuunnccttiioonn CCaappaacciittaannccee Junction Capacitance ( p F ) Revers e Voltage (V) 1 1000.1 T= 2 5J °C f = 1.0MHz V = 50mVsig p-p 0.4 0.8 1.2 1.6 2.0 2.4 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Lead Temperature ( °C) FFiigg..22 MMaaxxiimmuumm AAvveerraaggee FFoorrwwaarrdd CCuurrrreenntt RRaattiinngg Single phase half wave resistive or inductive P.C.B mounted on pad areas ×8.0mm 0.2 1.0 0.60 0.01 0.1 1.0 0.4 0.8 0.001 T= 2 5J °C Instaneous Forward Current (A) Instaneous Forwar d Voltage (V) ES2JF ES2EF ES2AF FFiigg..33 TTyyppiiccaall RReevveerrssee CChhaarraacctteerriissttiiccss I - Current ( A)R Reverse μ 20 100 600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T= 2 5J °C T= 7 5J °C T= 1 2 5J °C -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div EESS22AAFF TTHHRRUU EESS22JJFF
PPAACCKKAAGGEE OOUUTTLLIINNEE PPllaassttiicc ssuurrffaaccee mmoouunntteedd ppaacckkaaggee;; 22 lleeaaddss SSMMAAFF A CC ∠ALL ROUND V AM e UNIT mm max min mil max min 9.1 7.1 146 130 106 193 173 ACDE HE ∠ 1.6 1.3 e Bottom View HE g Top View 1.3 1.0 g g ∠ALL ROUND E D A E pad pad ES2AF ES2BF ES2CF ES2DF ES2EF ES2GF ES2JF EESS22AAFF TTHHRRUU EESS22JJFF TThhee rreeccoommmmeennddeedd mmoouunnttiinngg ppaadd ssiizzee Unit ：mm(mil) 2.8(110)1.6(63) 1.8(71) 1.6(63)