ES2ABF ZSELEC | Alldatasheet
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! G l ass Passivated Die Construction ! Low Forward Voltage Drop, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical D ata ! T erminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Weight: 0.057 grams (approx.) ! Lead Free: For RoHS / Lead Free Version Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 300 400 600 V RM S Reverse Voltage VR(RMS) 35 70 105 140 210 280 420 V Av erage Rectified Output Current @T L = 100°C IO 2.0 A Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 50 A Forward V oltage @I F = 2 .0A V FM 0.95 1. 25 1.7 V P ea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100° C IRM 5.0 100 µA Revers e Rec overy Time (Note 1) trr 35 nS T y pical Junction Capacitance (Note 2) Cj 45 pF T y pical Thermal Resistance (Note 3) R/G01JL 65 °C Operat i ng and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured with IF = 0.5A , IR = 1 .0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 1 of 2 ES2ABF – ES2JBF Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com A B C DF E G ES2BBF SMB F 4.404.20 3.703.50 Dim M i n Max A B C D E F G All Dim ensions in mm 0.260.18 5.505.10 1.301.10 1.00 - 2.201.90 Alldatasheet
2 of 2 ES2ABF – ES2JBF ES2ABF – ES2JBF Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com /G01/G01 0.01 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I , INST ANTANEOUS FORWARD CURRENT (A)F V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 25 C Pulse width = 300 s j ° m 50V DC Approx
50 NI (Non-inductive)W 10
1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 02 5 5 0 75 100 125 150 175 I , A VERAGE FWD RECTIFIED CURRENT (A)(AV) T,LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve L ° Singlephasehalfwave ResistiveorInductiveload -ES2ABF-ES2DBF -ES2EBF-ES2GBF ES2JBF 1.0 2.0 1 10 100 RO F K A E P , I ) A ( T N E R R U C E G R U S D R A W MS F NUMBER OF CYCLES A T 60Hz Fig. 3 Surge Current Derating Curve Single Half-Sine-W ave (JEDEC Method) 0.1 1.0 100 1000 0 40 80 120 ( T N E R R U C E S R E V E R S U O E N A T N A T S N I , I ) A R µ PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics T =
125 Cj °
T = 25 Cj ° Alldatasheet