ES2DAF-T TSC | Alldatasheet

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Technical content

ES2DAF-T – ES2JAF-T Taiwan Semiconductor

1 Version: B2103

2A, 200V - 600V Super Fast Surface Mount Rectifier

FEATURES

  • Glass passivated chip junction
  • Ideal for automated placement
  • Low reverse leakage
  • Moisture sensitivity level: level 1, per J-STD-020
  • RoHS Compliant
  • Halogen-free according to IEC 61249-2-21

APPLICATIONS

  • DC to DC converter
  • Switching mode converters and inverters
  • Freewheeling application MECHANICAL DATA
  • Case: SMAF
  • Molding compound meets UL 94V-0 flammability rating
  • Terminal: Matte tin plated leads, solderable per J-STD-002
  • Meet JESD 201 class 1 whisker test
  • Polarity: Indicated by cathode band
  • Weight: 0.035g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT IF 2 A VRRM 200 - 600 V IFSM 50 A TJ MAX 150 °C Package SMAF Configuration Single die SMAF ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL ES2DAF-T ES2GAF-T ES2JAF-T UNIT Marking code on the device ES2DAF ES2GAF ES2JAF Repetitive peak reverse voltage VRRM 200 400 600 V Reverse voltage, total rms value VR(RMS) 140 280 420 V Forward current IF 2 A Surge peak forward current single half sine-wave superimposed on rated load t = 8.3ms IFSM 50 A t = 1.0ms 130 A Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C

ES2DAF-T – ES2JAF-T Taiwan Semiconductor

2 Version: B2103

Junction-to-lead thermal resistance RӨJL 15 °C/W Junction-to-ambient thermal resistance RӨJA 89 °C/W Junction-to-case thermal resistance RӨJC 22 °C/W Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage(1) ES2DAF-T IF = 1A, TJ = 25°C VF 0.83 - V IF = 2A, TJ = 25°C 0.91 0.95 V IF = 1A, TJ = 125°C 0.68 - V IF = 2A, TJ = 125°C 0.78 0.89 V ES2GAF-T IF = 1A, TJ = 25°C 1.00 - V IF = 2A, TJ = 25°C 1.13 1.25 V IF = 1A, TJ = 125°C 0.80 - V IF = 2A, TJ = 125°C 0.94 1.14 V ES2JAF-T IF = 1A, TJ = 25°C 1.22 - V IF = 2A, TJ = 25°C 1.44 1.70 V IF = 1A, TJ = 125°C 0.89 - V IF = 2A, TJ = 125°C 1.09 1.50 V Reverse current @ rated VR (2) TJ = 25°C IR - 5 µA TJ = 125°C - 200 µA Reverse recovery time IF = 0.5A, IR = 1.0A, Irr = 0.25A trr - 35 ns Junction capacitance ES2DAF-T 1MHz, VR = 4.0V CJ 27 - pF ES2GAF-T 21 - pF ES2JAF-T 12 - pF Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms

ORDERING INFORMATION

ORDERING CODE PACKAGE PACKING ES2xAF-T SMAF 7,500 / Tape & Reel Notes: 1. “x” defines voltage from 200V (ES2DAF-T) to 600V (ES2JAF-T)

ES2DAF-T – ES2JAF-T Taiwan Semiconductor

3 Version: B2103

(TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics Fig.5 Typical Reverse Characteristics Fig.6 Typical Forward Characteristics 25 50 75 100 125 150 100 1 10 100 f=1.0MHz Vsig=50mVp-p ES2DAF-T ES2GAF-T ES2JAF-T 0.001 0.01 0.1 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=150°C 0.1 Pulse width 300μs 1% duty cycle Pulse width 300μs 1% duty cycle TJ=25°C TJ=125°C TJ=-55°C TJ=150°C 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=150°C 0.1 Pulse width 300μs 1% duty cycle Pulse width 300μs 1% duty cycle TJ=25°C TJ=125°C TJ=-55°C TJ=150°C CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) AVERAGE FORWARD CURRENT (A) REVERSE VOLTAGE (V) LEAD TEMPERATURE (°C) INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) ES2DAF-T ES2DAF-T ES2GAF-T ES2GAF-T

ES2DAF-T – ES2JAF-T Taiwan Semiconductor

4 Version: B2103

(TA = 25°C unless otherwise noted) Fig.7 Typical Reverse Characteristics Fig.8 Typical Forward Characteristics Fig.9 Typical Transient Thermal Impedance 0.01 0.1 100 1000 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=150°C 0.1 Pulse width 300μs 1% duty cycle Pulse width 300μs 1% duty cycle TJ=25°C TJ=125°C TJ=-55°C TJ=150°C 0.001 0.01 0.1 100 INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ=125°C UF1DLW FORWARD VOLTAGE (V) PULSE DURATION (s) TRANSIENT THERMAL IMPEDANCE (°C/W) ES2JAF-T ES2JAF-T

ES2DAF-T – ES2JAF-T Taiwan Semiconductor

5 Version: B2103

PACKAGE OUTLINE DIMENSIONS SMAF SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code

ES2DAF-T – ES2JAF-T Taiwan Semiconductor

6 Version: B2103

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life -saving, or life -sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and a gree to fully indemnify TSC for any damages resulting from such improper use or sale.