ES2AA THINKISEMI | Alldatasheet
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/cuspopen Glass passivated junction chip /cuspopen For surface mounted application /cuspopen Low profile package /cuspopen Built-in strain relief /cuspopen Ideal for automated placement /cuspopen Easy pick and place /cuspopen Superfast recovery time for high efficiency /cuspopen Glass passivated chip junction /cuspopen High temperature soldering: 2 6 0 O C/10 seconds at terminals /cuspopen Plastic material used carries Underwriters Laboratory Classification 94V-0 Mechanical Data /cuspopen Cases: Molded plastic /cuspopen Terminals: Pure tin plated, lead free. /cuspopen Polarity: Indicated by cathode band /cuspopen Packing: 12mm tape per EIA STD RS-481 /cuspopen Weight: 0.093 gram Maximum Ratings and Electrical Characteristics Rating at 25 O C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Units Maximum Recurrent Peak Reverse Voltage V RRM 50 100 150 200 300 400 500 600 V Maximum RMS Voltage V RMS 35 70 105 140 210 280 350 420 V Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 500 600 V Maximum Average Forward Rectified Current See Fig. 1 I (AV) 2.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) I FSM 50 A Maximum Instantaneous Forward Voltage @ 2.0A V F 0.95 1.3 1.7 V Maximum DC Reverse Current A =25 o C at Rated DC Blocking Voltage @ T A =100 o C I R 100 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 35 nS Typical Junction Capacitance ( Note 2 ) Cj 25 20 pF Maximum Thermal Resistance (Note 3) R θJA R θJL o C /W Operating Temperature Range T J -55 to +150 o C Storage Temperature Range T STG -55 to +150 o C Notes: 1. Reverse Recovery Test Conditions: I F =0.5A, I R =1.0A, I RR =0.25A 2. Measured at 1 MHz and Applied V R =4.0 Volts Pb Free Plating Product Pb ES2AA thru ES2JA
2.0 Amp Surface Mount Glass Passivated Super Fast Recovery Rectifiers
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.08T SMA/DO-214AC Unit: inch (mm) .181(4.60) .208(5.28) .060(1.52) .096(2.44) .062(1.60) .114(2.90) .008(.203) .012(.305) .157(4.00) .188(4.80) .030(0.76) .078(2.00) .047(1.20) .098(2.50) .002(.051) .006(.152) Symbol 2AA ES 2BA ES 2CA ES 2DA ES 2FA ES 2GA ES 2HA ES 2JA ES
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FOR WARD SURGE CURRENT . (A) 1 10 100 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave (JEDEC Method) at T =120 C L o FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FOR WARD CURRENT . (A) 80 90 100 120 140 150 130110 2.0 3.0 1.0 LEAD TEMPERATURE. ( C) o RESISTIVE OR INDUCTIVE LOAD 0.4X0.4"(10X10mm) COPPER PAD AREAS 10 100 FIG.4- TYPICAL JUNCTION CAPACITANCE JUNCTION CAP ACITANCE.(pF) REVERSE VOLTAGE. (V) ES2AA-ES2DA ES2FA-ES2JA Tj=25 C f=1.0MHz Vsig=50mVp-p FIG.2- TYPICAL REVERSE CHARACTERISTICS 0 20 40 60 80 100 120 140 100 1000 0.1 0.01 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) Tj=125 C Tj=85 C Tj=25 C INSTANTANEOUS REVERSE CURRENT .( A ) FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FOR WARD CURRENT . (A) 0.01 0.1 FORWARD VOLTAGE. (V) ES2AA-ES2DA ES2FA-ES2GA Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE ES2HA-ES2JA FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50/c87 NONINDUCTIVE /c49/c87 NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (-) (+) 10/c87 NONINDUCTIVE -1.0A -0.25A +0.5A trr 1cm SET TIME BASE FOR 5/ 10ns/ cm ES2AA thru ES2JA © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.08T