ES2A DSK | Alldatasheet
Document overview
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Technical content
2.0± 0.15 4 . 5± 0.1 5 3.5± 0.2 2.3± 0.15 1.25± 0.2 0.203MAX 0.2± 0.05 5 . 3± 0.2
FEATURES
Case:JEDEC DO-214AA,molded plastic Terminals: Solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.003 ounces,0.093 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ES2C ES2D ES2G Maximum recurrent peak reverse voltage V RRM 150 200 400 V Maximum RMS voltage V RMS 105 140 210 V Maximum DC blocking voltage V DC 150 200 400 V Maximum average forward rectified current A =110 Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @T J =125 Maximum instantaneous forward voltage at2.0 A V F V Maximum rev erse current @T A =25 at rated DC blocking v oltage @T A =125 Typical reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG 0.95 1.25 DO-214AA(SMB) UNITS - 55 ---- + 150 ES2A ES2B 50 100 A 50.0I FSM I R NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. A ES2A--- ES2G A Easily cleaned with Alcohol,Isopropanol and similar solvents I F(AV) 2.0 SURFACE MOUNT RECTIFIERS The plastic material carries U/L recognition 94V-0 10050 2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC. 350 VOLTAGE RANGE: 50 --- 400 V CURRENT: 2.0 A - 55 ---- + 150 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
T J =25 100 200 0.1 0.2 0.4 1 2 4 10 40 100 20 AMPERES AMPERES AMPERES JUNCTION CAPACITANCE,pF NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 INSTANTANEOUS FORWARD VOLTAGE, VOLTS INSTANTANEOUS FORWARD CURREN T ES2A --- ES2G FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC AVERAGE FORWARD CURRENT SET TIME BASE FOR 10/15 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE z FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORWARD SURGE CURRENT AMBIENT TEMPERATURE, PEAK FORWARD SURGE CURREN T NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS PULSE GENERATOR (NOTE2) D.U.T. NONIN- DUCTIVE N N1 . OSCILLOSCOPE (NOTE 1) (+) 25VDC (approx) (-) -1.0A -0.25A +0.5A t rr 1cm T J =25 0.01 0.1 1.0 100 0 0.4 0.8 1.0 1.8 Pulse width=300 s 1% Duty Cycle 2.0 11 0 1 0 0 8.3ms Single Half Sine-Wave 1.5 2.5 0 25 50 75 100 125 150 Single Phase Half Wave 60H Z Resistive or Inductive Load 175 Diode Semiconductor Korea www.diode.kr