ES2ABF_V01 YFWDIODE | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Surface Mount Superfast Recovery Rectifier Reverse Voltage - 50 to 600 V Forward Current - 2 A
FEATURES
Glass Passivated Chip Junction For surface mounted applications Low profile package Superfast reverse recovery time Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: SMBF Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 57mg / 0.00 2oz Pinning 1.Cathode 2.Anode 1 2 SMBF Absolute Maximum Ratings and characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Parameter Symbols ES2ABF ES2BBF ES2DBF ES2GBF ES2JBF Units Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 V Maximum RMS voltage VRMS 35 70 140 280 420 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 V Maximum Average Forward Rectified Current at Tc = 125 °C IF(AV) A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load IFSM 50 A Maximum Instantaneous Forward Voltage at 2 A VF 0.95 1.25 1.65 V Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta=125 °C IR 100 μA Typical Junction Capacitance at VR=4V,f=1MHZ Cj 28 pF Maximum Reverse Recovery Time（1） Trr 35 nS Typical Thermal Resistance （2） RθJA/ RθJC 60/18 °C/W Operating and Storage Temperature Range Tj, Tstg -55 ~ +150 （1）Measured with IF=0.5A,IR=1A,In=0.25A Marking Code ES2ABF E2AB ES2BBF E2BB ES2DBF E2DB ES2GBF E2GB ES2JBF E2JB
www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles Fig.3 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T =25J °C T =75J °C T =125J °C Fig.4 Typical CharacteristicsForward 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) T =25J °C 50 ohm Noninductive 25Vdc approx D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div 0.5 1.0 1.5 2.0 2.5 3.0 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (°C) Fig.2 Maximum Average Forward Current Rating Single phase half-wave 60 Hz resistive or inductive load 8.3 ms Single Half Sine Wave (JEDEC Method) Junction Capacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T =25J °C Fig.5 Typical Junction Capacitance T =25J °C f = 1.0MHz Vsig = 50mVp-p ES2JBF ES2EBF/WS2GBF ES2ABF~ES2DBF
www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Tape/Reel,13”reelSMBF SMBF 5000 Package Outline Plastic surface mounted package; 2leads The recommended mounting pad size Summary of Packing Options Package Packing Description Packing Quantity Industry Standard EIA-481-1 A C ∠ALL ROUND V AM e UNIT mm max min mil max min A C D E HE ∠ 2.2 1.9 e Bottom View HE g Top View 1.0 g g ∠ALL ROUND E D A E pad pad 51 10 173 146 216 43 7 165 138 200 Unit：mm(mil) 3.0(118)1.8(71) 2.54(100) 1.8(71)