ES1PD-M3 VISHAY | Alldatasheet

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ES1PB, ES1PC, ES1PD www.vishay.com Vishay General Semiconductor Revision: 30-Oct-13 1 Document Number: 88918 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Ultrafast Rectifiers

FEATURES

  • Very low profile - typical height of 1.0 mm
  • Ideal for automated placement
  • Glass passivated chip junction
  • Ultrafast recovery times for high efficiency
  • Low forward voltage, low power losses
  • Low thermal resistance
  • Meets MSL level 1 per J-STD-020, LF maximum peak of 260 °C
  • AEC-Q101 qualified
  • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in secondary rectification and freewheeling for ultrafast switching speeds of AC/DC and DC/DC converters for both consumer and automotive applications. MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 100 V, 150 V, 200 V trr 15 ns VF at IF 0.92 V TJ max. 150 °C Package DO-220AA (SMP) Diode variations Single die DO-220AA (SMP) eSMP ® Series Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ES1PB ES1PC ES1PD UNIT Device marking code EB EC ED Maximum repetitive peak reverse voltage V RRM 100 150 200 V Maximum average forward rectified current (fig. 1) I F(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Operating junction and storage temperature range T J, TSTG -55 to +150 °C

ES1PB, ES1PC, ES1PD www.vishay.com Vishay General Semiconductor Revision: 30-Oct-13 2 Document Number: 88918 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 5.0 mm x 5.0 mm copper pad areas. R JL is measured at the terminal of cathode band. RJC is measured at the top center of the body Note (1) Automotive grade RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Maximum instantaneous forward voltage I F = 0.6 A TJ = 25 °C V F (1) 0.865 V IF = 1 A 0.920 Maximum reverse current at rated V R TJ = 25 °C IR (2) 5.0 μATJ = 125 °C 500 Maximum reverse recovery time I F = 0.5 A, IR = 1 A, Irr = 0.25 A t rr 15 ns Typical reverse recovery time IF = 1.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 25 °C trr 25 nsTJ = 100 °C 30 Typical stored charge IF = 1.0 A, VR = 30 V, dI/dt = 50 A/μs, Irr = 10 % IRM TJ = 25 °C Qrr 8 nCTJ = 100 °C 10 Typical junction capacitance 4.0 V, 1 MHz C J 10 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL ES1PB ES1PC ES1PD UNIT Typical thermal resistance R JA (1) 105 °C/W RJL (1) 15 RJC (1) 20 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PA CKAGE CODE BASE QUANTITY DELIVERY MODE ES1PB-M3/84A 0.024 84A 3000 7" diam eter plastic tape and reel ES1PB-M3/85A 0.024 85A 10 000 13" di ameter plastic tape and reel ES1PBHM3/84A (1) 0.024 84A 3000 7" diameter plastic tape and reel ES1PBHM3/85A (1) 0.024 85A 10 000 13" diameter plastic tape and reel 1.2 80 90 100 110 120 130 140 150 0.8 1.0 0.2 0.4 0.6 Lead Temperature (°C) Average Forwar d Rectified Current (A) TL Measured at the Cathode Band Terminal 1 10 100 Number of Cycles at 50 Hz Peak Forwar d Surge Current (A)

ES1PB, ES1PC, ES1PD www.vishay.com Vishay General Semiconductor Revision: 30-Oct-13 3 Document Number: 88918 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.1 100 0.01 1.00.2 TJ = 150 °C TJ = 125 °C TJ = 25 °C Instantaneous Forward Voltage (V) In stantaneou s Forward Current (A) 20 40 60 80 100 0.1 100 10 30 50 70 90 0.01 10 000

1000 TJ = 150 °C

TJ = 125 °C TJ = 25 °C Percent of Rated Peak Reverse Voltage (%) In stantaneou s Rever se Current (μA) Reverse Voltage (V) Junction Capacitance (pF) 0.1 10 1 100 100 0.01 10 1 100 100 0.1 1000 t - Pulse Duration (s) Tran sient Thermal Impedance (°C/W) DO-220AA (SMP) Cathode Band 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.013 (0.35) 0.004 (0.10) 0.012 (0.30) 0.000 (0.00) 0.018 (0.45) 0.006 (0.15) 0.045 (1.15) 0.033 (0.85) 0.036 (0.91) 0.024 (0.61) 0.032 (0.80) 0.016 (0.40) 0.103 (2.60) 0.087 (2.20) 0.053 (1.35) 0.041 (1.05) 0.012 (0.30) REF. 0.100 (2.54) 0.105 (2.67) 0.025 (0.635) 0.030 (0.762) 0.050 (1.27)

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