ES1AF LEIDITECH | Alldatasheet

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Technical content

Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current – 1 A PINNING PIN

DESCRIPTION

Marking Code: ES1AF~ES1JF: ES1A~ES1J Simplified outline SMAF and symbol MECHANICAL DATA

  • Terminals: Solderable per MIL-STD-750, Method 2026
  • pprox. Weight: 27mg / 0.00095oz Case: SMAF A Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 1 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at TL = 100 °C Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta =125 °C Typical Junction Capacitance at V =4V, f=1MHzR VRRM VRMS VDC IF(AV) IFSM VF IR Cj T , Tj stg 50 100 150 200 300 400 600 V 35 70 105 140 210 280 420 V V 100 -55 ~ +150 A A V μA ns Symbols Ratings at ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 25 °C Absolute Maximum Ratings and Characteristics Maximum Reverse Recovery Time trr pF ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF Units 50 100 150 200 300 400 600 1.25 1.65

FEATURES

For surface mounted applications

  • Low profile package
  • Glass Passivated Chip Junction
  • Superfast reverse recovery time
  • Lead free in comply with EU RoHS 2011/65/EU directives 1 2 Typical Thermal Resistance RθJA 115 °C/W2） 1）Measured with I F = 0.5 A, I R = 1 A, Irr = 0.25 A ES1AF-ES1JF Rev

D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note：1 .Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram Fig.3 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T =25J °C T =75J °C T =125J °C -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Lead Temperature (°C) Fig.2 Maximum Average Forward Current Rating Single phase half wave resistive or inductive P.C.B mounted on 0.2×0 .2"(5 ) ×5mm pad areas Fig.5 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) 1 1000.1 T =25J °C f = 1.0MHz V = 50mVsig p-p 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) Fig.4 Typical CharacteristicsForward 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) T =25J °C ES1JF ES1EF/ES1GF ES1AF~ES1DF ES1AF-ES1JF Rev

Plastic surface mounted package; 2 leads SMAF A C ∠ALL ROUND V AM e UNIT mm max min mil max min 7.9 4.7 146 130 106 193 173 A C D E HE ∠ 1.6 1.3 e Bottom View HE g Top View 1.2 0.8 g g ∠ALL ROUND E D A E pad pad The recommended mounting pad size 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) Unit ：mm (mil) ES1AF-ES1JF Sha nghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev