ES1AW ZSELEC | Alldatasheet
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! Lo w Forward Voltage Drop, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical D ata ! Te rminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR(RMS) Av erage Rectified Output Current @T L = 100°C IO 1.0 A Non-Repeti tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM Forward V o ltage @I F = 1. 0A V FM P ea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100° C IRM 500 µA Ty pical Junction Capacitance (Note 2) Cj Ty pical Thermal Resistance (Note 3) R/G01JL Operati ng and Storage Temperature Range Tj, TSTG Note: 1. Measured with IF = 0.5A , IR = 1 .0A, Irr 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 1 of 2 1.00.2 2.80.1 1.9± 0. Cath ode Band Top View 3.70.2 0.60.25 1.4± 0 .15 0.10-0.30 SOD - 123FL Dimensions in millimeters Glass passivated device! ES1AW UNITS Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com rr 1.0 1.3 1.7 ES1CW ES1DW ES1EW ES1GWES1HWES1JW Alldatasheet
/G01/G01 I , PEAK FORWARD SURGE CURRENT (A)FSM 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current Pulse Width8.3ms Single Half-Sine-Wave (JEDEC Method) 100 1 10 100 C ,CAP ACITANCE (pF)j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1MHz j 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 175 200 I , A VERAGE FWD RECTIFIED CURRENT (A)(AV) T , AMBIENT TEMPERATURE (°C) Fig. 1 Forward Derating Curve A Single phasehalf-wave Hz resistive or inductive load 50V DC Approx 50 NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5 /10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 0.01 0.1 1.0 0.6 0.8 1.0 1.2 1.4 I , INST ANTANEOUS FWD CURRENT (A)F V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T =25°Cj Pulse width= 300 µs 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com ES1AW – ES1JW ES1AW – ES1JW Alldatasheet