ES1AF AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com ES1AF~ES1JF RECTIFIER DIODES REVERSE VOL TAGE 50V TO 600 V FORWARD CURRENT 1A REV1.0 - MAR 2015 RELEASED - - 1 - DESCRIPTION FEATURES The ES1AF~ES1JF is available in SMAF package For surface mounted applications Low profile package Glass Passivated Chip Junction Superfast reverse recovery time Available in SMAF package ORDERING INFORMATION MECHANICAL DATA Package Type Part Number SMAF ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products Case: SMAF Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 27mg 0.00086oz PIN DESCRIPTION
AiT Semiconductor Inc. www.ait-ic.com ES1AF~ES1JF RECTIFIER DIODES REVERSE VOL TAGE 50V TO 600 V FORWARD CURRENT 1A REV1.0 - MAR 2015 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Parameter Symbol ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF Unit Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at TL=100°C IF(AV) 1.0 A Peak Forward Surge Current 8.3ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) IFSM 25 A Maximum Forward Voltage at 1A VF 1.0 1.25 1.7 V Maximum DC Reverse Current at Rated DC Blocking Voltage TA=25°C TA=125°C IR 5.0 100 uA Typical Junction Capacitance at VR=4V, f=1MHz CJ 10 pF Maximum Reverse Recovery Time at IF=0.5A, IR=1A, Irr=0.25A trr 35 ns Operating and Storage Temperature Range TJ, TSTG -55 ~150 °C
AiT Semiconductor Inc. www.ait-ic.com ES1AF~ES1JF RECTIFIER DIODES REVERSE VOL TAGE 50V TO 600 V FORWARD CURRENT 1A REV1.0 - MAR 2015 RELEASED - - 3 - TYPICAL CHARACTERISTICS Figure. 1 Reverse Recovery Time Characteristic And Test Circuit Diagram Figure. 2 Maximum Average Forward Current Rating Figure. 3 Typical Reverse Characteristics Figure. 4 Typical Forward Characteristics Figure. 5 Typical Junction Capacitance
AiT Semiconductor Inc. www.ait-ic.com ES1AF~ES1JF RECTIFIER DIODES REVERSE VOL TAGE 50V TO 600 V FORWARD CURRENT 1A REV1.0 - MAR 2015 RELEASED - - 4 -
PACKAGE INFORMATION
Dimension in SMAF (Unit: mm) Plastic surface mounted package; 2 leads The recommended mounting pad size UNIT A B C E e g HE ∠ mm mil Max 51 9.1 146 106 63 51 193 Min 43 7.1 130 94 51 39 173
AiT Semiconductor Inc. www.ait-ic.com ES1AF~ES1JF RECTIFIER DIODES REVERSE VOL TAGE 50V TO 600 V FORWARD CURRENT 1A REV1.0 - MAR 2015 RELEASED - - 5 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.