ES1F FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • For surface mount applications.
  • Glass passivated junction.
  • Low profile package.
  • Easy pick and place.
  • Built-in strain relief.
  • Superfast recovery times for high efficiency. Absolute Maximum Ratings * Ta = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Value Units ES1F ES1G ES1H ES1J VRRM Maximum Repetitive Reverse Voltage 300 400 500 600 V IF(AV) Average Rectified Forward Current 1.0 A IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave (JEDEC method) 30 A TJ Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C PD Power Dissipation 1.47 W Symbol Parameter Value Units RθJA Thermal Resistance, Junction to Ambient * 85 °C/W RθJL Thermal Resistance, Junction to Lead * 35 °C/W Symbol Parameter Value Units VF Maximum Forward Voltage @ IF = 1.0 A 1.3 1.7 V Trr Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A 35 ns IR Maximum Reverse Current @ rated VR TA = 25°C TA = 100°C 5.0 100 uA Cj Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 10.0 8.0 pF Color Band Denotes Cathode SMA(DO-214AC)

2 www.fairchildsemi.com ES1F - ES1J Rev. A ES1F - ES1J Fast Rectifiers Typical Performance Characteristics FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT . (A) 1 10 100 5.0 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave (JEDEC Method) at T =120 CL o FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT . (A) 0.01 0.1 FORWARD VOLTAGE. (V) ES1A - D ES1F - 1G Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT . (A) 80 90 100 120 140 150 130110 0.2 0.6 0.8 1.2 1.0 0.4 LEAD TEMPERATURE. ( C) o RESISTIVE OR INDUCTIVE LOAD COPPER PAD AREAS FIG.4- TYPICAL REVERSE CHARACTERISTICS 0 20 40 60 80 100 120 140 100 1000 0.1 0.01 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) Tj=125 C0 Tj=85 C0 Tj=25 C0 10 100 6.0 4.0 2.0 8.0 FIG.5- TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE.(pF) REVERSE VOLTAGE. (V) ES1 F - G ES1 H Tj=25 C f=1.0MHz Vsig=50mVp-p INSTANTANEOUS REVERSE CURRENT. ( A) ES1H - 1J 0.01 0.1 Tj=25 o C PULSE WIDTH 300uS 1% DUTY CYCLE ES1F-1G ES1H-1J

3 www.fairchildsemi.com ES1F - ES1J Rev. A ES1F - ES1J Fast Rectifiers Package Dimensions Dimensions in Millimeters SMA / DO - 214AC

The following are registered and unregistered trademarks and service ma rks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or sys tems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordanc e with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ Motion-SPM™ OPTOLOGIC OPTOPLANAR® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC UniFET™ VCX™ Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub- lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontin- ued by Fairchild semiconductor. The datasheet is printed for reference infor- mation only. Rev. I30