ES1AW YFWDIODE | Alldatasheet
Document overview
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Technical content
Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current – 1 A
FEATURES
- Easy pick and place
- For surface mounted applications
- Low profile package
- Built-in strain relief
- Superfast recovery times for high efficiency MECHANICAL DATA
- Case: SOD-123FL
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight:15mg 0.00 053oz PINNING PIN
DESCRIPTION
Simplified outline SOD-123FL and symbol Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 1 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at TL = 100 °C Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta =125 °C Typical Junction Capacitance at V =4V, f=1MHzR VRRM VRMS VDC IF(AV) IFSM VF IR Cj T, Tj stg 50 100 150 200 300 400 600 V 35 70 105 140 210 280 420 V V 100 -55 ~ +150 A A V μA ns Symbols Ratings at ambient temperature unless otherwise specified. Sin gle phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 25 °C Absolute Maximum Ratings and Characteristics Maximum Reverse Recovery Time trr pF Units 50 100 150 200 300 400 600 1.25 1.68 Typical Thermal Resistance RθJA 120 °C/W2） 1）Measured with I F = 0.5 A, I R = 1 A, Irr = 0.25 A ES1AW ES1BW ES1CW ES1DW ES1EW ES1GW ES1JW ES1AW THRU ES1JWES1AW THRU ES1JW
D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note ：1.Rise Time = 7ns, max. Input Im pedanc e = 1megohm,22pF. 2. Ries Time =10ns, max. Source Im pedanc e = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram Fig.3 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100 600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T= 2 5J °C T= 7 5J °C T= 1 2 5J °C -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Average Forward Curren t (A) Lead Temperature ( °C) Fig.2 Maximum Average Forward Current Rating Fig.5 Typical Junction Capacitance Junction Capacitance ( p F ) Revers e Voltage (V) 1 1000.1 T= 2 5J °C f = 1.0MHz V = 50mVsig p-p 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) Fig.4 Typical CharacteristicsForward 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forwar d Voltage (V) T= 2 5J °C ES1JW ES1EW/WS1GW ES1AW~ES1DW Single phase half wave resistive or inductive P.C.B mounted on 0.2×0.2"(5 ) ×5mm pad areas Single phase half wave resistive or inductive P.C.B mounted on 0.2×0.2"(5 ) ×5mm pad areas ES1AW THRU ES1JW
Plastic surface mounted package; 2 leads SOD-123FL A A C ∠ALL ROUND VAM e UNIT mm max min mil max min 7.9 4.7 114 102 150 138 ACDE HE ∠ 1.1 0.8 e Bottom View HE ∠ALL ROUND E D E gpad pad Top View 0.9 0.7 g g The recommended mounting pad size 2.0 (79) 1.2 (47) mm (mil)Unit ： 1.2 (47) 1.2 (47) Marking Type number Marking code ES1AW ES1BW ES1CW ES1DW ES1EW ES1GW ES1JW ES1AW THRU ES1JW