ES1AF_V01 CHENDA | Alldatasheet
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The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage B uilt-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250°C/10 seconds at terminals Glass passivated chip junction Case : JEDEC SMAF Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.00095 ounce, 0.027 grams Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Maximum Ratings And Electrical Characteristics Parameter SYMBOLS ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF UNITSMarking Code MDD ES1AF MDD ES1BF MDD ES1CF MDD ES1DF MDD ES1EF MDD ES1GF MDD ES1JF Maximum repetitive peak reverse voltage VRMM 50 100 150 200 300 400 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 600 V Maximum average forward rectified current at TL=55℃ I(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 30 A Maximum instantaneous forward voltage at 1.0A VF 1 1.25 1.68 V TA=25℃Maximum DC reverse current at rated DCblocking voltage TA=125℃ IR 5.0 100.0 μA Maximum reverse recovery time (NOTE 1) trr 35 ns Typical junction capacitance (NOTE 2) CJ 15.0 pF Typical thermal resistance (NOTE 3) RJA 80.0 ℃/W Operating junction and storage temperature range TJ,TSTG - 5 5t o+ 1 5 0 ℃ Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 3.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 4.The typical data above is for referenceonly. Dimensions in inches and (millimeters) SMAF 0.193(4.90) 0.173(4.40) 0.047(1.20) 0.031(0.80) 0.008(0.20) 0.005(0.12) 0.047(1.20) 0.035(0.90) 0.146(3.70) 0.130(3.30) 0.063 (1.60) 0.051 (1.30) 0.106(2.70) 0.094(2.40)
Rev:2019A0 Page :2 Ratings And Characteristic Curves https://www.microdiode.com Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere ES1AF THRU ES1JF The curve above is for r eference only. Fig.3 Typical Reverse Characteristics IR- Reverse Current ( μA) 20 100600 0.1 1.0 100 40 80 300 TJ=25°C TJ=75°C TJ=125°C Noninductive 25Vdc approx D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note：1 .Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Sou r ce Impedance = 50 ohms. -0.25 -1.0 +0.5 50 ohm trr 10ns/div Set time Base for 10ns/div 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (°C) Fig.2 Maximum Average Forward Current Rating 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) Number of Cycles Fig.4 Typical Forward Characteristics 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) TJ=25°C ES1JF ES1EF/ES1GF ES1AF~ES1DF Single phase half-wave 60 Hz resistive or inductive load % of PIV.VOLTS Fig.5 Typical Junction Capacitance Junction Capacitance (pF) 1.0 10 1000.1 100 Reverse Voltage (V) TJ=25°C f = 1.0MHz Vsig = 50mV p-p 8 8. .3 m 3 ms S s Si in ng gl le H e Ha al lf S f Si in ne W e Wa av ve e ( (J JE ED DE EC M C Me et th ho od d) )
https://www.microdiode.com Rev:2019A0 Page :3 Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). Suggested Pad Layout E B d F W PA D D1D2 C T Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere ES1AF THRU ES1JF Item Tolerance SMAF Carrier width Carrier length Carrier depth Sprocket hole 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width P E B C d F T W P A D D Reel width W1 Symbol 0.1 0.1 0.1 min 0.5 0.1 0.3 1.0 0.1 0.05 0.1 0.1 0.1 0.1 2.0 unit:mm 1.50 178.00 54.40 13.00 1.75 5.05 4.00 4.00 2.00 0.30 8.00 12.30 .80 4.75 1.42 SMAF 7" 3,000 4.0 6,000 210 *208 *203 178 400*265 *400 120,000 10.0 PACKAGE REEL SIZE REEL COMPONENT SPACING BOX INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (kg)(pcs)(m/m)(m/m)(m/m)(pcs)(m/m)(pcs) 0.087 0.213 Symbol Unit (mm) A C D 0.063 5.4 2.2 E B Unit (inch) 0.150 1.6 0.0711.8 3.8