ES1ABF SEMIPOWER | Alldatasheet

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Technical content

Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current – 1 A PINNING PIN

DESCRIPTION

Simplified outline SMBF and symbol MECHANICAL DATA

  • Terminals: Solderable per MIL-STD-750, Method 2026
  • pprox. Weight: 57mg / 0.002oz Case: SMBF A

FEATURES

For surface mounted applications

  • Low profile package
  • Glass Passivated Chip Junction
  • Superfast reverse recovery time
  • Lead free in comply with EU RoHS 2011/65/EU directives Page 1 of 3 1 2 ES1ABF THRU ES1JBF Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load Maximum Forward Voltage at 1 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at T = 125 °Cc Typical Junction Capacitance at V =4V, f=1MHzR VRRM VRMS VDC IF(AV) IFSM VF IR Cj T , Tj stg 50 100 150 200 300 400 600 V 35 70 105 140 210 280 420 V V 100 -55 ~ +150 A A V μA ns Symbols Ratings at ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 25 °C Absolute Maximum Ratings and Characteristics Maximum Reverse Recovery Time trr pF Units 50 100 150 200 300 400 600 1.25 1.68 Typical Thermal Resistance RθJA 75 °C/W （1） （2） Maximum DC Reverse Current T = 25 °Ca at Rated DC Blocking Voltage T =125 °Ca ES1ABF ES1BBF ES1CBF ES1DBF ES1EBF ES1GBF ES1JBF （2） （1）Measured with I = 0.5 A, I = 1 A, I = 0.25 AF R rr Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0

Fig.3 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T =25J °C T =75J °C T =125J °C 50 ohm Noninductive 25Vdc approx D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (°C) Fig.2 Maximum Average Forward Current Rating Fig.4 Typical CharacteristicsForward 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) T =25J °C Single phase half-wave 60 Hz resistive or inductive load Fig.5 Typical Junction Capacitance Junction Capacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T =25J °C f = 1.0MHz Vsig = 50mVp-p ES1JBF ES1EBF/WS1GBF ES1ABF~ES1DBF 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) ES1ABF THRU ES1JBF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0

The recommended mounting pad size Unit：mm(mil) 3.0(118)1.8(71) 2.54(100) 1.8(71) PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMBF A C ∠ALL ROUND V AM e UNIT mm max min mil max min A C D E HE ∠ 2.2 1.9 e Bottom View HE g Top View 1.0 g g ∠ALL ROUND E D A E pad pad 51 10 173 146 216 43 7 165 138 200 ES1ABF THRU ES1JBF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0