ES1A_18 JUXING | Alldatasheet
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Ideal for automated placement Glass passivated chip junctions Low forward voltage drop Low leakage current High forward surge capability High temperature soldering 260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/1 and WEEE 2002/96/EC Mechanical Date Case: body over glass passivated chip Terminals: Solder plated, solderable per J-STD-002B and JESD22-B102D Polarity: Laser band denotes cathode end Maximum Ratings & Thermal Characteristics ES1A-ES1J Surface Mount Superfast Rectifiers W @T =125 @T =25 @T =100 R I T JA Time ES1J ES1G ES1D ES1B ES1A Rating at ambient temperature unless otherwise specified Single phase,half wave,60Hz,resistive or inductive load For capacitive load derate current by 20% Type Number SYMBOL Unit Maximum Recurrent Peak Reverse Voltage V RRM 100 200 400 600 V Maximum RMS Voltage V RMS 140 280 420 V Maximum DC Blocking Voltage V DC 100 200 400 600 V Average Rectified Output Current 1.0 A Peak Forward Surge Current 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) I FSM A Forward Voltage @IF=1.0A V FM 1.0 1.25 1.65 V Peak Reverse Current 5.0 uA At Rated DC Blocking Voltage 200 Maximum Reverse Recovery Trr ns Typical Junction Capacitance (Note C pF Typical Thermal Resistance Junction to Ambient(Note R θ 110 Operating Temperature Range T to +150 Storage Temperature Range to +150 Note: (Note Areas. Land Thick 8.0MM 1.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR=0.25A. Measured at 1.0 MHz and Applied reverse Voltage of 4.0V D.C .013mm A A L J J STG IF(AV) Rating for fusing (t<8.3ms) I t 5.08 A s 2 2 plastic JEDEC DO-214AC molded (SMA) SMA/DO-214AC 0.094(2.40) 0.059(1.50) 0.051(1.30) 0.110(2.80) 0.094(2.40) 0.181(4.60) 0.157(4.00) 0.075(1.90) 0.060(1.52) 0.030(0.76) 0.208(5.28) 0.185(4.70) 0.012(0.305) 0.006(0.150) Dimensions in inches and (millimeters) 0.010(0.25) 0.004(0.1)
http://www.trr-jx.comversion: 02 http://www.trr-jx.comversion: 02 Fig.2 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T =25J °C T =75J °C T =125J °C 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (°C) Fig.1 Maximum Average Forward Current Rating Single phase half wave resistive or inductive Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) 1 1000.1 10 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) Fig.3 Typical CharacteristicsForward 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) T =25J °C ES1J ES1E/ES1G ES1A~ES1D T =25J °C f = 1.0MHz V = 50mVsig p-p Characteristic Curves A =25 ℃ unless otherwise noted) ES1A-ES1J Surface Mount Superfast Rectifiers