ES1AF SEMIPOWER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current – 1 A PINNING PIN

DESCRIPTION

Marking Code: ES1AF~ES1JF: ES1A~ES1J Simplified outline SMAF and symbol MECHANICAL DATA

  • Terminals: Solderable per MIL-STD-750, Method 2026
  • pprox. Weight: 27mg / 0.00095oz Case: SMAF A Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load Maximum Forward Voltage at 1 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at T = 125 °Cc Typical Junction Capacitance at V =4V, f=1MHzR VRRM VRMS VDC IF(AV) IFSM VF IR Cj T , Tj stg 50 100 150 200 300 400 600 V 35 70 105 140 210 280 420 V V 100 -55 ~ +150 A A V μA ns Symbols Ratings at ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 25 °C Absolute Maximum Ratings and Characteristics Maximum Reverse Recovery Time trr pF ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF Units 50 100 150 200 300 400 600 1.25 1.68

FEATURES

For surface mounted applications

  • Low profile package
  • Glass Passivated Chip Junction
  • Superfast reverse recovery time
  • Lead free in comply with EU RoHS 2011/65/EU directives Page 1 of 3 1 2 Typical Thermal Resistance RθJA 80 °C/W ES1AF THRU ES1JF （1） （2） Maximum DC Reverse Current T = 25 °Ca at Rated DC Blocking Voltage T =125 °Ca （2） （1）Measured with I = 0.5 A, I = 1 A, I = 0.25 AF R rr Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0

Fig.3 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T =25J °C T =75J °C T =125J °C 50 ohm Noninductive 25Vdc approx D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (°C) Fig.2 Maximum Average Forward Current Rating 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) Fig.4 Typical CharacteristicsForward 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) T =25J °C ES1JF ES1EF/ES1GF ES1AF~ES1DF Single phase half-wave 60 Hz resistive or inductive load Fig.5 Typical Junction Capacitance Junction Capacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T =25J °C f = 1.0MHz Vsig = 50mVp-p 8.3 ms Single Half Sine Wave (JEDEC Method) ES1AF THRU ES1JF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0

Plastic surface mounted package; 2 leads SMAF A C ∠ALL ROUND V AM e UNIT mm max min mil max min 7.9 4.7 146 130 106 193 173 A C D E HE ∠ 1.6 1.3 e Bottom View HE g Top View 1.2 0.8 g g ∠ALL ROUND E D A E pad pad The recommended mounting pad size 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) Unit ：mm (mil) Page 3 of 3 ES1AF THRU ES1JF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0