ES1AF SAMYANG | Alldatasheet

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VOLTA GE RA NGE: 50 --- 600 V CURRENT: 1.0A SMAF MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS www.diode.co.kr SAMYANG ELECTRONICS SAM YANG ES1AF --- ES1JF Dimensions in inches and (millimeters) SUPER FAST RECTIFIERS 0.063(1.6 ) 0.051(1.3) 0.110(2.8 ) 0.094(2.4) 0.146(3.70) 0.128(3.25) 0.193(4.90) 0.172(4.35) 0.059(1.5) 0.004(0.1) 0.047(1.2) 0.028(0.6) For surface mounted applications

  • Low profile package
  • Glass Passivated Chip Junction
  • Superfast reverse recovery time
  • Lead free in comply with EU RoH S 2011/65/EU directives
  • Terminals : Solderable per MI L-STD-750, Method 2026
  • pprox. Weight: 27mg / 0.00095oz Case : SMAF A Ratings at ambient temperature unless otherwise specified . Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 25 °C Maximum DC Blocking Voltage Peak Forwar d Surge Current 8.3 m s Single Half Sine Wav e Superimposed on Rate d Load Maximum Forward Voltage at 1 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RM S voltage Operating an d Storage Temperature Range Maximum Average Forward Rectified Current at T = 125 °Cc Typical Junction Capacitance at V =4V, f=1MHzR VRRM VRMS VDC IF(AV) IFSM VF IR Cj T , Tj stg 50 100 150 200 300 400 600 V 35 70 105 140 210 280 420 V V 100 -55 ~ +150 A A V μA ns Symbols Maximum Reverse Recovery Time trr pF ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF Units 50 100 150 200 300 400 600 1.25 1.68 Typical Thermal Resistance RθJA 80 °C/W （1） （2） Maximum DC Reverse Current T = 25 °Ca at Rated DC Blocking Voltage T =125 °Ca （2） （1）Measured with I = 0.5 A, I = 1 A, I = 0.25 AF R rr All d ata sheet.com

www.diode.co.kr RATINGS AND CHARACTERISTIC CURVES ES1AF --- ES1JF Fig.3 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T =25J °C T =75J °C T =125J °C 50 ohm Noninductive 25Vdc approx D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note：1 .Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (°C) Fig.2 Maximum Average Forward Current Rating 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) Fig.4 Typical C haracteristicsForward 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) T =25J °C ES1JF ES1EF/ES1GF ES1AF~ES1DF Single phase half-wave 60 Hz resistive or inductive load Fig.5 Typical Junction Capacitance Junction Capacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T =25J °C f = 1.0MHz Vsig = 50mV p-p 8.3 ms Single Half Sine Wave (JEDEC Method) All d ata sheet.com

PACKAGE OUTLINE ES1AF --- ES1JF Marking Type number Marking code ES1A ES1B ES1C ES1D ES1E ES1G ES1J ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMAF A C ∠ALL ROUND V AM e UNIT mm max min mil max min 7.9 4.7 146 130 106 193 173 A C D E HE ∠ 1.6 1.3 e Bottom View HE g Top View 1.2 0.8 g g ∠ALL ROUND E D A E pad pad The recommended mounting pad size 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) Unit ：mm (mil) www.diode.co.kr All d ata sheet.com