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SURFACE MOUNT SUPERFAST RECOVERY RECTIFIERS Forward Current-1A Reverse Voltage-50V to 600V  Case: SMAF molded plastic body  Terminals: Solderable per MIL-STD- 750, Method 2026  Weight: Approximated 0.027 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derating by 20 %. PARAMETER SYMBOL ES1AF -PJ ES1BF -PJ ES1CF -PJ ES1DF -PJ ES1EF -PJ ES1GF -PJ ES1JF -PJ UNIT Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at TC=125℃ IF(AV) 1 A Peak Forward Surge Current (Note1) IFSM 30 A Maximum Forward Voltage at 1.0 A VF 1 1.25 1.68 V Maximum DC Reverse Current at Rated DC Blocking Voltage T A=25℃ TA=125℃ IR 100 uA Typical Junction Capacitance at VR=4V,f=1MHz CJ 15 p F Maximum Reverse Recovery Time (Note2) Trr 35 nS Typical Thermal Resistance (Note3) RθJA 80 ℃/W Operating and Storage Temperature Range TJ,TSTG -55 to +150 ℃ Notes: 1. Measured at 8.3 ms single half sine wave superimposed on rated load (JEDEC Method). 2. Measured at with IF=0.5A, IR=1A, Irr=0.25A.

FEATURES

 For surface mount applications  Glass passivated chip junction  Low profile package  Superfast reverse recovery time  Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA PIN DESCRIPTION

1 Cathode

2 Anode

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RATINGS AND CHARACTERISTIC CURVES ES1AF-PJ thru ES1JF-PJ 2 / 3www.pingjingsemi.com Revision:1.0 Oct-2017 Fig.3 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T =25J °C T =75J °C T =125J °C 50 ohm Noninductive 25Vdc approx D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (°C) Fig.2 Maximum Average Forward Current Rating 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surge Current Peak A)Forward Surge Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) Fig.4 Typical CharacteristicsForward 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) T =25J °C ES1JF-PJ ES1EF-PJ/ES1GF-PJ ES1AF-PJ~ES1DF-PJ Single phase half-wave 60 Hz resistive or inductive load Fig.5 Typical Junction Capacitance JunctionCapacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T=25J °C f = 1.0MHz Vsig = 50mV p-p 8.3 ms Single Half Sine Wave (JEDEC Method)

3.30 3.70 4.40 4.90 1.30 1.60 2.40 2.80 0.18 0.30 0.90 1.10 Dimensions in millimeters PACKAGE OUTLINE Device Package Shipping ES1AF-PJ thru ES1JF-PJ SMAF 3,000/T ape & Reel (7 inches) 10,000/ Tape & Reel (13 inches) SMAF

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www.pingjingsemi.com / 3 Revision:1.0 Oct-2017