ES1AF_19 JUXING | Alldatasheet
Document overview
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Technical content
Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 1 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at T = 100 °CL Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta =125 °C Typical Junction Capacitance at V =4V, f=1MHzR VRRM VRMS VDC IF(AV) IFSM VF IR Cj T , Tj stg 50 100 150 200 300 400 600 V 35 70 105 140 210 280 420 V V 0.8 1.1 -55 ~ +150 A A V μA ns Symbols Ratings at ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 25 °C Absolute Maximum Ratings and Characteristics Maximum Reverse Recovery Time trr pF Units 50 100 150 200 300 400 600 1.3 1.7 Typical Thermal Resistance RθJA 115 °C/W2) 1)Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A ES1AF S1BF S1CF S1DF S1EF S1GF S1JF Reverse Voltage – 50 to 600 V Forward Current –0.8 A PINNING PIN
DESCRIPTION
Simplified outline SMAF and symbol MECHANICAL DATA
- Terminals: Solderable per MIL-STD-750, Method 2026
- pprox. Weight: 27mg / 0.00095oz Case: SMAF A
FEATURES
For surface mounted applications
- Low profile package
- Glass Passivated Chip Junction
- Superfast reverse recovery time
- Lead free in comply with EU RoHS 2011/65/EU directives 1 2 ES1AF THRU ES1JF Surface Mount Superfast Rectifiers E E E E E E http://www.trr-jx.comversion: 02
D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram Fig.3 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T =25J °C T =75J °C T =125J °C -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Lead Temperature (°C) Fig.2 Maximum Average Forward Current Rating Fig.5 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) 1 1000.1 T =25J °C f = 1.0MHz V = 50mVsig p-p 10 100 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) Fig.4 Typical CharacteristicsForward 2.0 2.51.50 0.01 0.1 1.0 0.5 1.0 0.001 Instaneous Forward Current (A) Instaneous Forward Voltage (V) T =25J °C ES1JF ES1EF /ES1GF ES1AF ~ES1DF Single phase half wave resistive or inductive P.C.B mounted on 0.2×0.2"(5 ) ×5mm pad areas Single phase half wave resistive or inductive P.C.B mounted on 0.2×0.2"(5 ) ×5mm pad areas Surface Mount Superfast Rectifiers ES1AF THRU ES1JF http://www.trr-jx.comversion: 02
Plastic surface mounted package; 2 leads SMAF A C ∠ALL ROUND V AM e Bottom View HE g Top View g ∠ALL ROUND E D A E pad pad The recommended mounting pad size 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) Unit :mm (mil) ES1A. ES1B. ES1C. ES1D. ES1E. ES1G. ES1J Surface Mount Superfast Rectifiers UNIT mm max min mil max min 35.4 9.1 7.1 146 130 106 193 173 A C D E HE ∠ 1.6 1.3 e 1.3 1.0 g ES1AF THRU ES1JF http://www.trr-jx.comversion: 02