ES1AF YFWDIODE | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
SSuurrffaaccee MMoouunntt SSuuppeerrffaasstt RReeccoovveerryy RReeccttiiffiieerr RReevveerrssee VVoollttaaggee –– 5500 ttoo 660000 VV FFoorrwwaarrdd CCuurrrreenntt –– 11 AA PPIINNNNIINNGG PIN
DESCRIPTION
Marking Code: ES1AF~ES1JF: ES1A~ES1J Simplified outline SMAF and symbol MECHANICAL DATA
- Terminals: Solderable per MIL-STD-750, Method 2026
- pprox. Weight: 27m g 0.00086oz Case: SMAF A Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 1 A PPaarraammeetteerr Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at TL = 100 °C Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta =125 °C Typical Junction Capacitance at V =4V, f=1MHzR VRRM VRMS VDC IF(AV) IFSM VF IR Cj T, Tj stg 50 100 150 200 300 400 600 V 35 70 105 140 210 280 420 V V 100 -55 ~ +150 A A V μA ns SSyymmbboollss Ratings at ambient temperature unless otherwise specified. Sin gle phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 25 °C AAbbssoolluuttee MMaaxxiimmuumm RRaattiinnggss aanndd CChhaarraacctteerriissttiiccss Maximum Reverse Recovery Time at I =0.5A, I =1A, I =0.25AFR rr trr pF EESS11AAFF EESS11BBFF EESS11CCFF EESS11DDFF EESS11EEFF EESS11GGFF EESS11JJFF UUnniittss 50 100 150 200 300 400 600 1.25 1.7 1 2 EESS11AAFF TTHHRRUU EESS11JJFF
FEATURES
For surface mounted applications
- Low profile package
- Glass Passivated Chip Juntion
- Superfast reverse recovery time
- Lead free in comply with EU RoHS 2011/65/EU directives
D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note ：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. FFiigg..11 RReevveerrssee RReeccoovveerryy TTiimmee CChhaarraacctteerriissttiicc AAnndd TTeesstt CCiirrccuuiitt DDiiaaggrraamm FFiigg..44 TTyyppiiccaall CChhaarraacctteerriissttiiccssFFoorrwwaarrdd 1.2 1.4 FFiigg..55 TTyyppiiccaall JJuunnccttiioonn CCaappaacciittaannccee Junction Capacitance ( p F ) Revers e Voltage (V) 1 1000.1 T= 2 5J °C f = 1.0MHz V = 50mVsig p-p 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Lead Temperature ( °C) FFiigg..22 MMaaxxiimmuumm AAvveerraaggee FFoorrwwaarrdd CCuurrrreenntt RRaattiinngg Single phase half wave resistive or inductive P.C.B mounted on pad areas ×8.0mm 0.2 1.0 0.60 0.01 0.1 1.0 0.4 0.8 0.001 T= 2 5J °C Instaneous Forward Current (A) Instaneous Forwar d Voltage (V) ES1JF ES1EF ES1AF FFiigg..33 TTyyppiiccaall RReevveerrssee CChhaarraacctteerriissttiiccss I - Current ( A)R Reverse μ 20 100 600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T= 2 5J °C T= 7 5J °C T= 1 2 5J °C -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div EESS11AAFF TTHHRRUU EESS11JJFF
PPAACCKKAAGGEE OOUUTTLLIINNEE PPllaassttiicc ssuurrffaaccee mmoouunntteedd ppaacckkaaggee;; 22 lleeaaddss SSMMAAFF A CC ∠ALL ROUND V AM e UNIT mm max min mil max min 9.1 7.1 146 130 106 193 173 ACDE HE ∠ 1.6 1.3 e Bottom View HE g Top View 1.3 1.0 g g ∠ALL ROUND E D A E pad pad ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF EESS11AAFF TTHHRRUU EESS11JJFF TThhee rreeccoommmmeennddeedd mmoouunnttiinngg ppaadd ssiizzee Unit ：mm(mil) 2.8(110)1.6(63) 1.8(71) 1.6(63)