ES1A

ES1A_16 TMT | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

• Glass passivated junction chip - Ideal for automated placement - Super fast recovery time for high efficiency - Built-in strain relief - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Part No. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test V RRM 50 100 150 200 300 400 500 600 V VRMS 35 70 105 140 210 280 350 420 V VDC 50 100 150 200 300 400 500 600 V IF(AV) A trr ns CJ pF TJ °C TSTG °C Document Number: DS_D1411076 Version: M15 TJ=25°C TJ=125°C Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied VR=4.0 Volts Note 1: Pulse test with PW=300μs, 1% duty cycle 0.95 1.3 1.7 100 Maximum reverse recovery time (Note 2) Storage temperature range - 55 to +150 - 55 to +150 Typical junction capacitance (Note 3) Typical thermal resistance RθJL RθJA Maximum instantaneous forward voltage (Note 1) @ 1 A VF V Operating junction temperature range μA °C/W Maximum reverse current @ rated VR Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 1 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load I FSM 30 ES IR ES ES ES UNIT A Moisture sensitivity level: level 1, per J-STD-020 Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL ES ES ES ES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: DO-214AC (SMA) DO-214AC (SMA) ES1A - ES1J Taiwan Semiconductor 1A, 50V - 600V Surface Mount Super Fast Rectifiers

FEATURES

PART NO. PART NO. (TA=25°C unless otherwise noted) Document Number: DS_D1411076 Version: M15 AEC-Q101 qualified Green compoundES1JHR3G ES1J H R3 G Note 1: "x" defines voltage from 50V (ES1A) to 600V (ES1J) EXAMPLE PREFERRED PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX

DESCRIPTION

N/A E3 Clip SMA 1,800 / 7" Plastic reel E2 Clip SMA 7,500 / 13" Plastic reel F2 Folded SMA 7,500 / 13" Paper reel F4 Folded SMA 7,500 / 13" Plastic reel 7,500 / 13" Paper reel M2 SMA 7,500 / 13" Plastic reel F3 Folded SMA 1,800 / 7" Plastic reel PACKAGE PACKING ES1x (Note 1) H G SMA 1,800 / 7" Plastic reel R2 SMA ES1A - ES1J Taiwan Semiconductor RATINGS AND CHARACTERISTICS CURVES

ORDERING INFORMATION

PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX 0.2 0.4 0.6 0.8 1.2 80 90 100 110 120 130 140 150 AVERAGE FORWARD CURRENT (A) LEAD TEMPERATURE (°C) FIG.1 MAXIMUM FORWARD CURRENT DERATING CURVE RESISTER OR INDUCTIVE LOAD 1 10 100 PEAK FORWARD SURGE CURRENT (A) NUMBER OF CYCLES AT 60 Hz FIG. 3 MAXIMUM NON-REPETITIVE FORWARD PEAK SURGE CURRENT 8.3ms Single Half Sine Wave 0.01 0.1 100 1000 0 20 40 60 80 100 120 140 INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 4 TYPICAL REVERSE CHARACTERISTICS TJ=125°C TJ=75°C TJ=25°C 0.1 100 INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) FIG. 2 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS ES1H-1J Pulse Width=300μs 1% Duty Cycle ES1F-1G ES1A-D

A 1.27 1.58 0.050 0.062 B 4.06 4.60 0.160 0.181 C 2.29 2.83 0.090 0.111 D 1.99 2.50 0.078 0.098 E 0.90 1.41 0.035 0.056 F 4.95 5.33 0.195 0.210 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 P/N = Specific Device Code G = Green Compound YW = Date Code F = Factory Code Document Number: DS_D1411076 Version: L14 0.155 0.095 0.215 MARKING DIAGRAM C3 . 9 3 D2 . 4 1 E5 . 4 5 SUGGESTED PAD LAYOUT Symbol Unit (mm) A1 . 6 8 B1 . 5 2 Unit (inch) 0.066 0.060 ES1A - ES1J Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) DO-214AC (SMA) 100 0.1 1 10 100 JUNCTION CAPACITANCE (pF) REVERSE VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE ES1A-D ES1F-J f=1.0MHz Vsig=50mVp-p

assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1411076 Version: M15 ES1A - ES1J Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,