ES1A HDSEMI | Alldatasheet

Document overview

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Technical content

Features

o

  • VRRM 50V-600V
  • High surge current capability

Applications

  • Rectifier From A To JX Marking Polarity: Color band denotes cathode Glass passivated chip ● ES1X H igh Diode Semiconductor SMAK ES1A THRU ES1J ES1 Item Symbol Unit Test Conditions A B C D E G H J Repetitive Peak Reverse Voltage V RRM V 50 Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load, T L =120℃ 1.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 30 Junction Temperature T J ℃ -55~+150 Storage Temperature T STG ℃ -55 ~ +150 100 150 200 300 400 500 600 V RMS V 35 70 105 140 210 280 350 420 Electrical Characteristics (T=25℃ Unless otherwise specified） ES1 Item Symbol Unit Test Condition A B C D E G H J V F V I F =1.0A 0.95 1.25 1.70 Maximum reverse recovery time =0.25A 35 I RRM1 Peak Reverse Current I 100 R θJ-A Between junction and ambient 85 Thermal Resistance(Typical) R θJ-L /W℃ Between junction and terminal 35 Notes: pad areas t rr ns I F =0.5A,I R =1.0A,I rr μA V RM RRM Ta =25℃ Ta =100℃ Peak Forward Voltage Maximum RMS Voltage

H igh Diode Semiconductor V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time 80 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5.0mm×5.0mm)Copper Pad Areas TL( 1.2 90 100 110 120 130 140 0.2 0.4 0.6 0.8 1.0 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave 11 0 1 0 0 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=150 0 20 40 60 80 100 0.1 1.0 100 1000 Tj=25 Tj=125 Tj=100 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 1.6 ES1H-ES1J ES1E-ES1G ES1A-ES1D

H igh Diode Semiconductor SMAK SMAK 0.106(2.70) 0.096(2.45) 4.12 1.8

H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMA