ES1A GULFSEMI | Alldatasheet
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VOLTAGE ：： ：：50 TO 600V CURRENT ：： ：： 1.0A FEATURE SMA ／／ ／／DO-214AC Ideal for surface mount pick and place application Low profile package Built-in strain relief High surge capability High temperature soldering guaranteed 260 ℃/10sec/at terminals Glass passivated chip Ultrafast recovery time for high efficiency MECHANICAL DATA Terminal ：Solder plated, solderable per MIL-STD-750, Method 2026 Case ： JEDEC DO-214AC molded plastic body over passivated chip Polarity ： Color band denotes cathode Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25 ℃, unless otherwise stated, for capacitive load, derate current by 20 ％) SYMBOL ES1A ES1B ES1C ES1D ES1G ES1J units Maximum Recurrent Peak Reverse Voltage Vrrm 50 100 150 200 400 600 V Maximum RMS Voltage Vrms 35 70 105 140 280 420 V Maximum DC blocking Voltage Vdc 50 100 150 200 400 600 V Maximum Average Forward Rectified Current 3/8 ″lead length at T L =110℃ If(av) 1.0 A Peak Forward Surge Current 8.3ms single half sine- wave superimposed on rated load Ifsm 30.0 A Maximum Forward Voltage at rated forward current Vf 0.92 1.25 1.5 V Maximum DC Reverse Current Ta =25 ℃ at rated DC blocking voltage Ta =125 ℃ Ir 10.0 100.0 μA μA Maximum Reverse Recovery Time (Note1 ) Trr 15 25 35 nS Typical Junction Capacitance (Note 2) Cj 18.0 pF Typical Thermal Resistance (Note 3) R(jl) 30.0 ℃/W Storage and Operating Junction Temperature Tstg, Tj -50 to +150 ℃ Note ： 1. Reverse Recovery Condition If = 0.5A, Ir =1.0A, Irr =0.25A 2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 3. Thermal Resistance from Junction to terminal mounted on 5 ×5mm copper pad area 1 Rev.A1 www.gulfsemi.com
RATINGS AND CHARACTERISTIC CURVES ES1A THRU ES1J Rev.A1 www.gulfsemi.com