ES11M SECOS | Alldatasheet

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Technical content

ES11M~ES15M 50 ~ 600 V

1.0 Amp Surface Mount Efficient Fast Rectifiers

01-December-2008 Rev. A Page 1 of 2 RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant DESCRIPTIONS z Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. z Low profile surface mounted application in order to optimize board space. z Small plastic SMD package. z tRR less than 25nS for high efficiency z Low forward drop down voltage z High surge and high current capability. z Superfast recovery time for switching mode application. z Glass-passivated chip junction. PACKAGING INFORMATION z Case: Molded plastic z Epoxy: UL94-V0 rate flame retardant z Weight: 0.0270 g (approximately) MARKING CODE Part Number Marking Code Part Number Marking Code ES11M E 1 ES1 4M E 4 ES12M E 2 ES1 5M E 5 ES13M E 3 ELECTRICAL CHARACTERISTICS AND RATINGS (TA = 25°C unless otherwise specified.) PART NUMBERS PARAMETERS SYMBOL ES11M ES12M ES13M ES14M ES15M UNITS TESTING CONDITIONS Recurrent Peak Reverse Voltage (Max.) VRRM 50 100 200 400 600 V RMS Voltage (Max.) V RMS 35 70 140 280 420 V Reverse Voltage (Max.) V R 50 100 200 400 600 V Forward Voltage (Max.) V F 0.875 1.25 1.75 V I F = 1A Average Forward Rectified Current (Max.) I O 1.0 A Ambient temperature = 55°C Peak Forward Surge Current I FSM 30 A 8.3ms single half sine-wave superimposed on rated load (JEDEC method)

5.0 VR=VRRM, TA=25°C DC Reverse Current at

Rated DC Blocking Voltage (Max.) IR 100 μA VR=VRRM, TA=125°C Reverse Recovery Time tRR 25 nS Junction Capacitance (Typ.) C J 15 pF f=1MHz and applied 4V DC reverse voltage Storage and Operating Temperature Range T STG, TJ -65 ~ 175, -55 to 150 °C SOD-123M A 3.50 3.90 D 3.60 (MAX.) B 1.40 1.80 E 0.80 (TYP.) C 1.30 1.70 F 0.30 (TYP.) EE F B C D A

ES11M~ES15M 50 ~ 600 V 01-December-2008 Rev. A Page 2 of 2 RATINGS AND CHARACTERISTIC CURVES FIG.1-TYPICAL FORWARD CHARACTERISTICS FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) FIG.5-TYPICAL JUNCTION CAPACIT ANCE INSTANTANEOUS FORWARD CURRENT,(A) FORWARD VOLTAGE,(V) (+) (+) 25Vdc (approx.) ( ) ( ) PULSE GENERATOR (NOTE 2) OSCILLISCOPE (NOTE 1) NON- INDUCTIVE W NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. +0.5A -0.25A -1.0A 1cm SET TIME BASE FOR 10 / 20ns / cm trr D.U.T. FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS NONINDUCTIVE NONINDUCTIVE W W FIG.2-TYPICAL FORWARD CURRENT AVERAGE FORWARD CURRENT,(A) 0.2 0.4 0.6 0.8 1.0 1.2 DERATING CURVE REVERSE VOLTAGE,(V) JUNCTION CAPACITANCE,(pF) .01 .05 .1 .5 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz 1 10 5 50 100 T =25 CJ 8.3ms Single Half Sine Wave JEDEC method Single Phase Half Wave 60Hz Resistive Or Inductive Load 0.375"(9.5mm) Lead Length AMBIENT TEMPERATURE ( C) 0 25 50 75 100 125 150 175 0.01 0.1 Tj=25°C pulse width =300 μS 1% duty cycle ES11M ~ ES13M ES14M ES15M