ES1000FL ZSELEC | Alldatasheet
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! Lo w Forward Voltage Drop, High Efficiency ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanic al Data ! T erminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum R atings and Electrical Characteristics @TA=25° C unless otherwise specified P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse V oltage VR(RM A verage Rec tified Output Current @T L = 100°C I O 1.0 A Non-Repet itive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM Forward V oltage @I F = 1.0A V FM P e a k R e v e r s e C u r r e n t @ TA = 25° C At Rated DC Blocking Voltage @T A = 100 °C IRM 2.0 500 µA T ypical Junction Capacitance (Note 2) Cj Typic al Thermal Resistance (Note 3) R/G01JL Operating and St orage Temperature Range Tj, TSTG Note: 1. Measured with IF = 0. 5A, IR = 1.0A, Irr = 0.25A . See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. 1 of 2 Glass passivated device! UNITS Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com rr 1.0 1.3 1.7 1.00.2 2.60.2 1.8± 0. C athode Band Top View 3.60.2 0.70.3 1.0± 0 .15 SOD - 123FL Dimensions in millimeters 1.0± 0 .15 50 100 200 300 400 500 600 V ES1000FL - ES1006 FL ES1000FLES1001FL ES1002FL ES1003FLES1004FL ES1005FLES1006FL
I , PEAK FOR WARD SURGE CURRENT (A)FSM 1 10 100 NUMBER OF CYCLESA T 60 Hz Fig. 3 Peak Forward Surge Current Pulse Width 8.3ms Single Half-Sine-W ave (JEDEC Method) 100 1 10 100 C , CAPACIT ANCE (pF)j V , REVERSEVOL TAGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1MHz j T , AMBIENTTEMPERA TURE (°C) Fig. 1 Forward Derating Curve A 50V DC Approx
50 NI (Non-inductive)W 10
1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5 /10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 ReverseRecovery Time Characteristic and Test Circuit (+) (+) (-) (-) 0.01 0.1 1.0 0.6 0.8 1.0 1.2 1.4 I , INSTANT ANEOUS FWD CURRENT (A)F V , INSTANT ANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 25°Cj Pulse width =300 µs 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com ES1000FL – ES1006 FL ES1000FL - ES1006 FL 0.25 0.50 0.75 1.00 02 5 5 0 75 100 125 150 175 I , A VERAGE FWD RECTIFIED CURRENT (A)(AV) Singlephasehalfwave ResistiveorInductiveload