ES07B DSK | Alldatasheet
Document overview
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Technical content
1.0 0.2 2.8 0.1 1.9± 0.1 Cathode Band Top View 3.7 0.2 0.6 0.25 1.4± 0.15 0.10-0.30
FEATURES
◇ Glass passivated device ◇ Ideal for surface mouted applications ◇ Low leakage current ◇ Metallurgically bonded construction ◇ High temperature soldering: 250℃/10 seconds at terminals MECHANICAL DATA ◇ Case:JEDEC SOD-123FL,molded plastic over passivated chip ◇ Terminals:Solder Plated, solderable per MIL-STD-750, Method 2026 ◇ Polarity: Color band denotes cathode end ◇ Weight: 0.003 ounces, 0.01 gram ◇ Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single hase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. ABSOLUTE RATINGS ED V RRM V V RMS V V DC V R JθA K/W t rr ns T j T STG NOTES:1.Averaged over any 20 ms period. 2. Thermal resistance junction to ambient, 6.0 mm coppeer pads to each terminal. 3.Measured with I F =0.5A, I R =1A, I rr =0.25A. UNITS EB 70 140 100 200 - 55 --- + 150 ES07B --- ES07D 100 200 AI (AV) A SURFACE MOUNT RECTIFIERS 1.0 ES07B ES07D REVERSE VOLTAGE: 100 - 200 V CURRENT: 1.0 A SOD - 123FL Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Typical thermal resistance (NOTE 2) Operating temperature range Storage temperature range on rated load T L =25℃ 180 Maximum average forword rectified current T A =65℃ (NOTE 1) Peak forward surge current 8.3ms single half-sine-wave superimposed I FSM - 55 --- + 150 Maximum reverse recovery time (NOTE 3) Device marking code Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
C j pF NOTES: 4.Pulse test:300µs pulse width,1% duty cycle. 5.Measured at 1.0MHz and applied average voltage of 4.0V DC. forward voltage at 1.0A Maximum DC reverse current @T A =25℃ at rated DC blockjing voltage @T A =125℃ µA V I R Typical junction capacitance (NOTE 5) V F Parameter Maximum instantaneous (NOTE 4) Min 100 0.98 Max. Typ. www.diode.kr Diode Semiconductor Korea
0.01 0.02 0.06 0.04 0.1 0.2 0.4 1.0 100 T J =25 Pulse Width=300us AMPERES CAPACITANCE, pF MICROAMPERES AVERAGE FORWARD CURRENT, AMPERES FIG.1 --TYPICAL FORWARD CHARACTERISTIC FIG.2 -- TYPICAL JUNCTION CAPACITANCE ES07B --- ES07D INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS INSTANTANEOUS REVERSE CURRENT INSTANTANEOUS FORWARD CURRENT FIG.3 -- TYPICAL INSTANTANEOUS FIG.4 -- FORWARD DERATING CURVE AMBIENT TEMPERATURE,℃INSTANTANEOUS REVERSE VOLTAGE,VOLTS 0 5 10 15 20 25 30 35 40 0.6 0.8 1.2 1.0 0 20 40 60 80 100 120 140 160 0.4 0.2 Resistive or Inductive Load 3.0 x 3.0mm 40 µm Thick Copper Pad Areas 0 100 200 300 400 500 600 700 800 9000.01 0.1 100 T J = 150°C T J = 125°C T J = 100°C T J =7 5°C T J =5 0°C T J =2 5°C REVERSE CHARACTERISTICS www.diode.kr Diode Semiconductor Korea