ERF7530 EKL | Alldatasheet
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Technical content
RF Power MOSFET - 30MHz / 75 Watt PEP
DESCRIPTION
The ERF7530 is a MOSFET transistor developed for RF power amplifier applications in the HF frequency range. High power in a TO-218 package for an excellent ‘watt per dollar’ value.
FEATURES
- High Power and Economical: Pout > 20W (75W PEP) Gp > 10dB @ 12.5V, f=30MHz
- V TH Sorted in 0.2V Steps for Easy Matching of Parts in Push-Pull and Parrallel Designs APPLICATION Final amplification stages in mobile HF transceivers and amplifiers. TO-218 PACKAGE OUTLINE & MARKINGS Pins: 1. Gate 2. Drain 3. Source 4. Drain (Fin) ERF7530 Rev.2.0 MAR 2009 E b e D 0P F A Q C 12 3 L L1 DIM MIN MAX A4 . 9 5 b1 1 . 2 C2 . 2 2 . 8 D 14.8 15.2 E 20.1 20.5 E1 12.5 12.7 e5 . 4 5 . 6 F 1.98 2.1 L1 4 1 5 L1 1.5 1.9 P4 4 . 2 Q0 . 5 0 . 6 q1 44 . 1 MILLIMETERS ERF7530
0830 GDate Code
(see Electrical Characteristics) Part Number
RF Power MOSFET - 30MHz / 75 Watt PEP ERF7530 Rev.2.0 MAR 2009 ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE SPECIFIED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT V DSS Drain to source voltage Vgs = 0V 50 V V GSS Gate to source voltage Vds = 0V +/- 20 V Pch Channel dissipation Tc=25°C 120 W ID Drain current 15 A Tch Channel temperature 150 °C Tstg Storage temperature -40 to +150 °C 1.2 °C/WRth j-c Thermal resistance junction to case SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT IDSS Zero gate voltage drain current V DS = 50V, VGS = 0V - - 500 μA Gate threshold voltage 2 - 4 V ERF7530A 2.000 - 2.199 V ERF7530B 2.200 - 2.399 V ERF7530C 2.400 - 2.599 V ERF7530D 2.600 - 2.799 V ERF7530E 2.800 - 2.999 V ERF7530F 3.000 - 3.199 V ERF7530G 3.200 - 3.399 V ERF7530H 3.400 - 3.599 V ERF7530I 3.600 - 3.799 V ERF7530J 3.800 - 75 90 4.000 V WPout Output Power V DD = 12.5V, Pin=7.5W f=30MHz V DS =1 2 V , IDS = 250μAV TH
ELECTRICAL CHARACTERISTICS
(Tc=25°C UNLESS OTHERWISE SPECIFIED) NOTE: Above parameters, specifications, ratings, limits and conditions are subject to change.
.01 10K 100P P IN 11 6T5 .01 P OUT1 1 470UF 6.8K 3T5 3T5 8T5
8 VOLT TRANSMIT
RF Power MOSFET - 30MHz / 75 Watt PEP ERF7530 Rev.2.0 MAR 2009 TEST CIRCUIT (f=30MHz)
RF Power MOSFET - 30MHz / 75 Watt PEP ERF7530 Rev.2.0 MAR 2009 INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS f = 30Mhz, Vds = 12V, Id = 0.5A 0.10.01 0.1.101 0.10100 0.20.2020 0.20.2022 0.20200 22 0.3 0.3 0.3 0.4 0.4 0.404. 0.5 0.5 0.50500 0.6 0.6 0.6 0.7 0.7 0.7 0.8 0.8 0.88 0.9 0.9 0.99 1.01.0 1.00 1.2 1.2 1.2 1.4 1.4 1.4 1.6 1.6 1.66 1.8 1.8 1.88 2.0 2.0 2.020. 3.0 3.0 3.00 4.044 4.000 4.04044 0 5.05.05.00 5.05.05.05 5.005.055 00 10110 100100 10100 202022200 2020000202 002020222222200 5050550 5050005 505050 0.2 0.2 0.2 0.2 0.4 0.4 0.4 0.4 0.6 0.6 0.6 0.6 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 -20 -30 -40 -50 -60 -70 -80 -90 100 -100 110 -110 120 -120 130 -130 140 -140 150 -150 160 -160 170 -170 180 90-90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 0.04 0.04 0.05 0.05 0.06 0.06 0.07 0.07 0.08 0.08 0.09 0.09 0.1 0.1 0.11 0.11 0.12 0.12 0.13 0.13 0.14 0.14 0.15 0.15 0.16 0.16 0.17 0.17 0.18 0.18 0.19 0.19 0.2 0.2 0.21 0.21 0.22 0.22 0.23 0.23 0.24 0.24 0.25 0.25 0.26 0.26 0.27 0.27 0.28 0.28 0.29 0.29 0.3 0.3 0.31 0.31 0.32 0.32 0.33 0.33 0.34 0.34 0.35 0.35 0.36 0.36 0.37 0.37 0.38 0.38 0.39 0.39 0.4 0.4 0.41 0.41 0.42 0.42 0.43 0.43 0.44 0.44 0.45 0.45 0.46 0.46 0.47 0.47 0.48 0.48 0.49 0.49 0.0 0.0 ANGLE OFTRAN SM ISSION COEFFICIEN T IN DEGREES ANGLE OFREFLECTION COEFFICIEN T IN DEGREES W AVELEN GTH STOW ARD GENERATOR W AVELENGTHSTOW ARD LOAD IIIINNDDUUCCCTTTTIIVVVVEEEEREEACTANNCEECOOMPPONNENT(++jj+X//Zoo), OOR CCAPPACCITIVE SSUSCEPPTANCE (+jjB/ Yo)) CAPACITIVEREEACTANNCECOMPPONNENNT(-jj-X//Zo),ORINNDUUCTTIVEESUSCEEPTAANCCCCEEEE((-jjjBBBB//YYoooo)) RESISTANCES STANCERESISTAS S ANCENCE COMPONENTCOCC M O E TOMPONENTOM O E T (R/Zo),R Z ,(R/ZR Z ORO CONDUCTANCEON C ANNDUCTANN C AN COMPONENTC M N T (G/Yo)/ ))) Zo = 3.6-j0.48ohms Zi = 2.6-j0.48ohms
RF Power MOSFET - 30MHz / 75 Watt PEP ERF7530 Rev.2.0 MAR 2009 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) (m ag) (angle) (m ag) (angle) (m ag) (angle) (m ag) (angle) S11 S21 S12 S22FREQ. (MHz )
RF Power MOSFET - 30MHz / 75 Watt PEP The data and specifications provided in this publication are believed to be accurate and reliable. However, EKL Components assumes no responsibility or liability for the consequences of use of this information. This publication supersedes and replaces all information previously supplied. Data and specifications are subject to change with- out notice. WARNING Semiconductor failure may cause personal injury, fire and/or property damage. Do not exceed the maximum rating conditions of this device in any design. As with all plastic molded devices, exceeding the maximum ratings of the device may cause the package to fail which may lead to an explosion and/or fire. Take all precautions and consider all safety issues when designing your circuits. EKL Components PO Box 1997 Gig Harbor WA 98335 Tel: 425-818-5142 Fax: 425-484-2400 Email: info@EKLComponents.com © 2009 EKL Components - All Rights Reserved ERF7530 Rev.2.0 MAR 2009