ERC18-02 DSK | Alldatasheet
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FEATURES
Case:JEDEC DO-15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any MA XIMUM RA TINGS A ND ELECTRICA L CHA RA CTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERC18 -04 UNITS Maximum recurrent peak reverse voltage V RRM 400 V Max imum RMS v oltage V RMS 280 V Maximum DC blocking voltage V DC 400 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 1.2 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 M axim um reverse recovery tim e (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE:1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 100 VOLTAGE RANGE: 200 --- 400 V CURRENT: 1.2 A 1.2 A FAST RECOVERY RECTIFIERS I F(AV) The plastic material carries U/L recognition 94V-0 200 5.0 100.0 1.0 ERC18-02---ERC18-04 140 200 DO - 15 Easily cleaned with Freon,Alcohol,Isopropanol ERC18 -02 A I FSM 3. Thermal resistance f rom junction to ambient. A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. -55----+150 -55----+150 I R 40.0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
0.04 0.1 1.0 1.2 1.4 2.0 T J =25 Pulse Width=300uS 1.7 1.9 2024 1 081 0 0 40 60 80 T J =125 8.3ms Single Half Sine-Wave 0.2 0.6 0.4 0.8 1.0 1.2 1.4 40 60 80 100 120 140 Single Phase Half Wave 60Hz Resistivs or Inductive Load PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) -1.0A -0.25A +0.5A t rr 1cm .1 .2 .4 1.0 2 4 10 20 40 100 100 T J =25 f=1MHz AMPERES AMPERES AMPERES JUNCTON CAPACITANCE,pF ERC18-02---ERC18-04 SET TIME BASE FOR 50 ns /cm AMBIENT TEMPERATURE, NUMBER OF CYCLES AT 60 Hz N OTE S:1.R ISE TIM E =7ns M AX. IN P U T IM P E D AN C E =1M .22pF FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM FIG.2 --FORWARD DERATING CURVE INST ANT ANEOUS FORWARD VOLT AGE,VOLT S REVERSE VOLT AGE,VOLT S FIG.5-- TYPICAL JUNCTION CAPACITANCE 2.R ISE TIM E =10ns M AX. SOU R C E IM P E D AN C E =5O AVERAGE FORWARD CURRENT FIG.3 --PEAK FORWARD SURGE CURRENT FIG.4--TYPICAL FORWARD CHARACTERISTIC PEAK FORWARD SURGE CURRENT INSTANTANEOUS REVERSE CURRENT www.diode.kr Diode Semiconductor Korea