ERC04-02 DSK | Alldatasheet
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Technical content
FEATURES
Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any MA XIMUM RA TINGS A ND ELECTRICA L CHA RA CTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERC04 -06 ERC04 -10 UNITS Maximum recurrent peak reverse voltage V RRM 600 1000 V Max imum RMS v oltage V RMS 420 700 V Max imum DC bloc king v oltage V DC 600 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 4.0 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Typical junction capacitance (Note1) C J pF Typical thermal resistance (Note2) R θJA Operating junction temperature range T J Storage temperature range T STG A Easily cleaned with Freon,Alcohol,Isopropanol I F(AV) 1.2 The plastic material carries U/L recognition 94V-0 A100 I FSM A NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. - 55 ---- + 150 - 55---- + 150 I R 1.1 2. Thermal resistance f rom junction to ambient. PLASTIC SILICON RECTIFIERS 400 280 400 ERC04 -04 ERC04-02---ERC04-10 DO - 15 200 140 200 ERC04 -02 VOLTAGE RANGE: 200 --- 1000 V CURRENT: 1.2 A Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
T J =125 8.3ms Single Half Sine-Wave 2 4 10 8 10040 60 80 100 120 140 160 0.5 0.6 T J =25 Pulse Width=300uS 0.04 0.01 0.1 0.4 1.0 100 TJ=25 f=1MHz .4 1.0 2 100 14 0 0 7525 Single Phase Half Wave 60H Z Resistive or Inductive Load 100 125 175 150 0.2 0.4 0.8 0.6 1.0 1.2 AMPERES JUNCTION CAPACITANCE,pF AMPERES PEAK FORWARD SURGE CURRENT AMPERES FIG.3 --CURRENT DERATING CURVE FIG.4 --PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz ERC04-02---ERC04-10 INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS AMBIENT TEMPERATURE, FIG.1 -- FORWARD CHARACTERISTIC FIG.2 -- JUNCTION CHARACTERISTICS PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT www.diode.kr Diode Semiconductor Korea