ERB32-01 BILIN | Alldatasheet
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FEATURES
Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage VRRM V Max imum RMS v oltage VRMS V Max imum DC bloc king v oltage VDC V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Max imum ins tantaneous f orw ard v oltage @ 1.2A VF V Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 Max imum r ev ers e r ec ov ery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA Operating junction temperature range TJ Storage temperature range TSTG Easily cleaned with alcohol,Isopropanol and similar solvents 100 ERB32 - 01 100 ERB32-01 --- ERB32-02 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE: 100 --- 200 V CURRENT: 1.2 A DO - 15 3. Thermal resistance f rom junction to ambient. A 50.0 IR IFSM NOTE: 1. Measured with I F=0.5A, I R=1A, Irr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. - 55 ----- + 150 - 55 ----- + 150 IF(AV) 1.2 The plastic material carries U/L recognition 94V-0 200 200 140 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ERB32 - 02 A 5.0 50.0 A 0.92 www.galaxycn.com BL BLGALAXY ELECTRICALDocument Number 0262019 1.
NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE, VOLTS PEAK FORWARD SURGE CURRENT. REVERSE VOLTAGE,VOLTS FIG.5 -- TYPICAL FORWARD CHARACTERISTIC FIG.4--PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT AVERAGE FORWARD RECTIFIED CURRENT. AMBIENT TEMPERATURE. BLGALAXY ELECTRICAL RATINGS AND CHARACTERISTIC CURVES ERB32-01 -- ERB32-02 FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC JUNCTION CAPACITANCE,pF SET TIME BASE FOR 20/30 ns/cmNOTES:1.RISE TIME=7ns MA X.INPUT IMPEDANCE=1MΩ.22pF 2.RISE TIM E =10ns M AX.SOURCE IM PE DANCE =50Ω. FIG.3--TYPICAL JUNCTION CAPACITANCE FIG.2 --FORWARD DERATING CURVE www.galaxycn.com Document Number 0262019 2. 0.01 0.1 1.0 TJ=25 Pulse Width=300µS 0 40 20 60 0.6 0.2 0.4 80 100 120 0.8 1.2 1.4 Single Phase Half Wave 60Hz Resistive or Inductive Load 140 150 TJ=25 100 200 0.1 0.2 0.4 1 2 4 10 40 100 20 TJ=125 8.3ms Single Half Sine-Wave 24 1 0 81 0040 60 80 N1. NONIN- DUCTIVE N1. (+) 25VDC (approx) (-) D. U.T. (+) PU LSE GENERATOR (N O TE2) (-) OSCI LLOSCOPE (NO TE 1) t rr -1.0A -0.25A +0.5A 1cm