ERB32-01 DSK | Alldatasheet
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FEATURES
Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Max imum DC bloc king v oltage V DC V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Max imum ins tantaneous f orw ard v oltage @ 1.2A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Max imum r ev ers e r ec ov ery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG Easily cleaned with alcohol,Isopropanol and similar solvents 100 ERB32 - 01 100 ERB32-01---ERB32-02 HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE: 100 --- 200 V CURRENT: 1.2 A DO - 15 3. Thermal resistance f rom junction to ambient. A 50.0 I R I FSM NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. - 55 ----- + 150 - 55 ----- + 150 I F(AV) 1.2 The plastic material carries U/L recognition 94V-0 200 200 140 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ERB32 - 02 A 5.0 50.0 A 0.92 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE, VOLTS PEAK FORWARD SURGE CURRENT. REVERSE VOLTAGE,VOLTS FIG.5 -- TYPICAL FORWARD CHARACTERISTIC FIG.4--PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT AVERAGE FORWARD RECTIFIED CURRENT. AMBIENT TEMPERATURE. ERB32-01 -- ERB32-02 FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC JUNCTION CAPACITANCE,pF SET TIME BASE FOR 20/30 ns/cmNOTES:1.RISE TIME=7ns MA X.INPUT IMPEDANCE=1MΩ.22pF 2.RISE TIM E =10ns M AX.SOURCE IM PE DANCE =50Ω. FIG.3--TYPICAL JUNCTION CAPACITANCE FIG.2 --FORWARD DERATING CURVE 0.01 0.1 1.0 T J =25 Pulse Width=300 µ S 0 40 20 60 0.6 0.2 0.4 80 100 120 0.8 1.2 1.4 Single Phase Half Wave 60Hz Resistive or Inductive Load 140 150 T J =25 100 200 0.1 0.2 0.4 1 2 4 10 40 10020 T J =125 8.3ms Single Half Sine-Wave 24 1 0 81 0040 60 80 N NONIN- DUCTIVE N (+) 25VDC (approx) (-) D. U.T. (+) PU LSE GENERATOR (N O TE2) (-) OSCI LLOSCOPE (NO TE 1) t rr -1.0A -0.25A +0.5A 1cm www.diode.kr Diode Semiconductor Korea