ERA32-01 DSK | Alldatasheet
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FEATURES
Case:JEDEC DO--41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Max imum DC bloc king v oltage V DC V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 1.0A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG A 5.0 50.0 A 0.92 200 200 140 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ERA32 - 02 3. Thermal resistance f rom junction to ambient. A 40.0 I R I FSM NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. - 55 ----- + 150 - 55 ----- + 150 ERA32-01 --- ERA32-02 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE: 100 --- 200 V CURRENT: 1.0 A DO - 41 Easily cleaned with alcohol,Isopropanol and similar solvents 100 ERA32 - 01 100 I F(AV) 1.0 The plastic material carries U/L recognition 94V-0 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
FIG.4--TYPICAL JUNCTION CAPACITANCE FIG.3 --FORWARD DERATING CURVE JUNCTION CAPACITANCE,pF ERA32-01 -- ERA32-02 FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE, VOLTS PEAK FORWARD SURGE CURRENT. REVERSE VOLTAGE,VOLTS FIG.1 -- TYPICAL FORWARD CHARACTERISTIC FIG.5--PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT AVERAGE FORWARD RECTIFIED CURRENT. AMBIENT TEMPERATURE. 00.01 0.1 1.0 T J =25 Pulse Width=300 µ S 0.2 40 20 0.4 0.6 1.2 0.8 1.4 80 60 100 140 120 150 Single Phase Half Wave 60Hz Resistive or Inductive Load T J =25 100 200 0.1 0.2 0.4 1 2 4 10 40 10020 12 4 1 0 8 20 40 60 80 100 T J =125 8.3ms Single Half Sine-Wave30 (+) PU LS E GENERATOR (N OTE2) (-) D. U. T. NONI N- DUCTI VE N N1 . OSCI LLOSCOPE (N OTE 1) (+) 25VDC (approx) (-) t rr -1 .0 A -0 .25A +0.5A 1cm www.diode.kr Diode Semiconductor Korea