ERA22-02 DSK | Alldatasheet
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FEATURES
Case:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any MA XIMUM RA TINGS A ND ELECTRICA L CHA RA CTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage V RRM V Max imum RMS voltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 0.5 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Max imum reverse recov ery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE: 1. Measured with I F =0.5A, I R =1A, I rr =0.25A. 2. Measured at 1.0MH Z and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to ambient. A I FSM A -55----+150 -55----+150 I R 20.0 5.0 100.0 1.5 100 0.5 A FAST REC OVE RY REC T IFIER S I F(AV) The plastic material carries U/L recognition 94V-0 ERA22 ERA22 ERA22 ERA22 ERA22 200 400 600 800 1000 140 280 420 560 700 200 400 600 800 1000 DO - 41 Easily cleaned with Freon,Alcohol,Isopropanol VOLTAGE RANGE: 200 --- 1000 V CU RRENT: 0.5 A Dimensions in millimeters ERA22-02-- -ERA22-10 www.diode.kr Diode Semiconductor Korea
T J =25 f=1MHz .4 1.0 2 4 10 20 40 100 7525 50 Single Phase Hal f Wave 60H Z Resistive or Inductive Load 100 125 175 150 0.1 0.5 0.6 0.4 0.3 0.2 0.6 T J =25 Pulse Width=300 µ S 0.4 0.01 0.02 0.06 0.04 0.1 0.2 1.0 100 1 2 4 1082 0 40 6 080 100 T J =125 8.3ms Single Half Sine-Wave PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) -1.0A -0.25A +0.5A t rr 1cm AMPERES CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES JUNCTION CAPACITANCE,pF ERA22-02-- -ERA22-10 SET TIME BASE FOR 50/100 ns /cm NUMBER OF CYCLES AT 60 Hz AMBIENT T EMPERAT URE, N OTE S:1.R ISE TIM E =7ns M AX. IN P U T IM P E D AN C E =1M .22pF FIG REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM FIG.4 -- CURRENT DERATING CURVE FIG.5---TYPECAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT INST ANT ANEOUS FORWARD VOLT AGE,VOLT S INST ANEOUS FORWARD VOLT AGE,VOLT S 2. RISE TIME=10ns MAX. SOURCE IMPEDANCE=5O FIG.2-- PE AK FORWARD SURGE CURRE NT FIG.3-- FORWARD DERATING CURVE AVERAGE FORWARD RECTIFIED CUR R www.diode.kr Diode Semiconductor Korea