ER800 ZSELEC | Alldatasheet
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tings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol ER 800 ER 801 ER 801A ER 802 ER 803 ER 804 ER
806 Unit
Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 300 400 600 V RM S Reverse Voltage VR(RMS) 35 70 105 140 210 280 420 V A verage Rectified Output Current @T C = 105°C IO 8.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 125 A Forward V o ltage @I F = 8. 0A V FM 0.95 1.3 1.7 V P ea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100° C IRM 400 µA Revers e Rec overy Time (Note 1) trr 35 50 nS Typical Junction Capacitance (Note 2) Cj pF Operat i ng and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 1 of 2 ER800 – ER806 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com P I N 1 3 D F E P I N 1 + + J PI N 3 - C a s e K TO -220AC Dim Min Max A 13.90 15.90 B 9.80 10.70 C 2.54 3.43 D 3.56 4.56 E 12.70 14.73 F 0.51 1.14 G 3.55 Ø 4.09 Ø H 5.75 6.85 I 3.56 4.83 J 2.03 2.92 K 0.30 0.64 L 1.10 1. P 4.80 5.35 Al l Dimensions in mm A C P I LH B TO-220AC Cas e: TO-220AC, Molded Plastic ! G la s s P a s s i v a t e d D i e C o n s t r u c t i o n ! Super-Fast Switching ! L o w F o r w a r d V o l t a g e D r o p ! Low Reverse Leakage Current ! H i g h S u r g e C u r r e n t C a p a b i l i t y ! Plastic Material has UL Flammability ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! P o l a r i t y : S e e D i a g r a m ! Weight: 2.24 grams (approx.) ! M o u n t i n g P o s i t i o n : A n y ! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max. Lead Free: For RoHS / Lead Free Version
/G01/G01 120 150 180 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 8.3 ms single half-sine-wave JEDEC method 100 400 0.1 1.0 10 100 V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R 803 -806 800 -802 C , CAP ACITANCE (pF)j 0 50 100 150 I , A VERAGE FORWARD CURRENT (A)(AV) T , CASE TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve C ° 0.1 1.0 100 0.2 0.6 1.0 1.4 I , INST ANTANEOUS FORWARD CURRENT (A)F V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F Pulse width = 300 s 2% duty cycle m 806 803 - 804800 -802 ER800 – ER806 2 of 2 ER800 – ER806 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 50V DC Approx NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note Pulse Generator (Note 2) Device Under Test trr Settimebasefor5 /10ns/cm +0.5A -0.25A -1.0ANotes: 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig.
5 Reverse Recovery Time Characteristic and Test Circuit
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