ER3GA SMC | Alldatasheet
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Technical content
Technical Data Green Products Data Sheet N0247, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • ER3GA ER3GA ULTRAFAST PLASTIC RECTIFIER Features:
- Glass Passivated Die Construction
- Ideally Suited for Automatic Assembly
- Low Forward Voltage Drop, High Efficiency
- Surge Overload Rating to 100 A Peak
- Low Power Loss
- Super Fast Recovery Time
- Plastic Case Material has UL Flammability Classification Rating 94V-O
- Green Products in Compliance with the ROHS Directive
- This is a Pb − Free Device
- All SMC parts are traceable to the wafer lot
- Additional testing can be offered upon request Mechanical Data:
- Case: Low Profile Molded Plastic
- Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026
- Polarity :Cathode Band or Cathode Notch
- Weight: 0.68 grams (approx.)
- Marking: Type Number Mechanical Dimensions: In mm / Inches OPTION 1
Technical Data Green Products Data Sheet N0247, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • ER3GA OPTION 2(JK) SMA
Technical Data Green Products Data Sheet N0247, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • ER3GA Marking Diagram: Where XXXXX is YYWWL ER = Device Type 3 = Forward Current (3A) G = Reverse Voltage (400V) A = Package type YY = Year WW = Week L = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping ER3GA SMA (Pb-Free) 5000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification.
Technical Data Green Products Data Sheet N0247, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • ER3GA Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Characteristic Symbol ER3GA Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 400 V Average Rectified Output Current @TL = 75°C Io 3.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 100 A Forward Voltage @IF = 3.0A, TJ=25°C V F 1.25 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 5.0 500 µA Typical Thermal Resistance Junction to Lead (Note 1) R θJL 16 K/W Maximum Reverse Recovery Time (Note 2) Trr 35 ns Typical Junction Capacitance (Note 3) C J 45 pF Operating and Storage Temperature Range T J, TSTG -65 to +150 °C Case Style SMA Note: 1. Mounted on P.C. Board with 8.0mm2 lead area 3. Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC
Technical Data Green Products Data Sheet N0247, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • ER3GA
Technical Data Green Products Data Sheet N0247, Rev. -
- Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • ER3GA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..