ER3AF CHENDA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
3.0
3.0 Amperes
SURFACE MOUNT SUPER FAST RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. VOLTS VOLTS VOLTS SYMBOLS UNITS Amps Amps Volts VRRM VRMS VDC I(AV) IFSM VF 50.0 0.95 Operating junction and storage temperature range Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=55 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C IR 5.0 200.0 RθJA CJ TJ,TSTG 40.0 60.0 -50 to +150 pF C Aµ Typical thermal resistance (NOTE 3) C/W Typical junction capacitance (NOTE 2) Maximum reverse recovery time (NOTE 1) trr 35 ns ER3AF ER3BF ER3CF ER3EF ER3JF Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. 100 100 150 105 150 400 280 400 600 420 600 200 140 200 300 210 300 1.25 1.7
FEATURES
The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed:
260 C/10 seconds at terminals
Glass passivated chip junction Super fast switching for high efficiency Case Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0018 ounce, 0.064 grams : JEDEC SMAF molded plastic body over passivated chip Dimensions in inches and (millimeters) SMAF Cathode Band Top View 0.130(3.3) 0.146(3.7) 0.193(4.90) 0.173(4.40) 0.106(2.70) 0.094(2.40) 0.051(1.30) 0.063(1.60) 0.051(1.30) 0.043(1.10) 0.0091(0.23) 0.0071(0.18) 0.051(1.30) 0.039(1.0)
RATINGS AND CHARACTERISTIC CURVES ER3AF THRU ER3JF 50 ohm Noninductive 25Vdc approx D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram Fig.4 Typical CharacteristicsForward 1.2 1.4 Fig.5 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) 1 1000.1 T =25J °C f = 1.0MHz V = 50mVsig p-p 0.6 1.2 1.8 2.4 3.0 3.5 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Lead Temperature (°C) Fig.2 Maximum Average Forward Current Rating Single phase half wave resistive or inductive P.C.B mounted on 0.315×0.315"(8.0 ) pad areas ×8.0mm 0.2 1.00.60 0.01 0.1 1.0 0.4 0.8 0.001 T =25J °C Instaneous Forward Current (A) Instaneous Forward Voltage (V) ER3JF ER3EF ER3AF Fig.3 Typical Reverse Characteristics I - Current ( A)R Reverse μ 20 100600 0.1 1.0 % of PIV.VOLTS 100 40 80 300 T =25J °C T =75J °C T =125J °C -0.25 -1.0 +0.5 trr 10ns/div Set time Base for 10ns/div The cruve g ra p h is for reference onl y , can't be the basis for j ud g ment 曲线图仅供参考