ER2A ZSELEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
! G l ass Passivated Die Construction ! Low Forward Voltage Drop, High Efficiency /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical D ata ! Te rminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 300 400 600 V RM S Reverse Voltage VR(RMS) 35 70 105 140 210 280 420 V Av erage Rectified Output Current @T L = 120°C IO 2.0 A Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 50 A Forward Vo ltage @I F = 2. 0A V FM 0.95 1.30 1.7 V P ea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100° C IRM 5.0 500 µA Revers e Rec overy Time (Note 1) trr 35 nS T y pical Junction Capacitance (Note 2) Cj T y pical Thermal Resistance (Note 3) R/G01JL 35 °C Operat i ng and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured with IF = 0.5A , IR = 1 .0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 1 of 2 ER2A – ER2J Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 25 20 Dim Min Max Min Max A 2.29 2.92 3.30 3.94 B 4.00 4.60 4.06 4.57 C 1.27 1.63 1.96 2.21 D 0.15 0.31 0.15 0.31 E 4.80 5.59 5.00 5.59 G 0.10 0.20 0.10 0.20 H 0.76 1.52 0.76 1.52 J 2.01 2.62 2.00 2.62 All Dimensions in mm A B C D GH E J SMA SMB ! Lead Free: For RoHS / Lead Free Version Weight:! SMA Weight: 0.064 grams (approx.) SMB Weight: 0.093 grams (approx.) Alldatasheet
0.01 0.1 1.0 0 0.2 0.4 I , INST ANTANEOUS FORWARD CURRENT (A)F V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 25 C Pulse width = 300 s j ° m 50V DC Approx 50 NI (Non-inductive)W 10 NIW 1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Settimebasefor5/10ns/cm +0.5A -0.25A -1.0ANotes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF. 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 02 5 5 0 75 100 125 150 175 I , A VERAGE FWD RECTIFIED CURRENT (A)(AV) T,LEAD TEMPERATURE Fig. 1 Forward Current Derating Curve L ° Singlephasehalfwave ResistiveorInductiveload ER2A -ER2D ER2E -ER2G ER2J 2 of 2 ER2A – ER2J ER2A – ER2J Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 1.00 2.00 1 10 100 RO F K A E P , I ) A ( T N E R R U C E G R U S D R A W MS F NUMBER OF CYCLES AT 60Hz Fig. 3 Surge Current Derating Curve Single Half-Sine-W ave (JEDEC Method) 0.1 1.0 100 1000 0 40 80 120 ( T N E R R U C E S R E V E R S U O E N A T N A T S N I , I ) A R µ PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics T =
125 Cj °
T =