ER1600N THINKISEMI | Alldatasheet
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/hexstar2 Low forward voltage drop /hexstar2 Fast switching for high efficiency /hexstar2 High current capability /hexstar2 Case: Heatsink TO-220AB open metal package /hexstar2 High surge current capability /hexstar2 Weight: 2.0 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant TO-220AB/TO-220-3L Unit : inch (mm) ER1600N thru ER1606N Pb Free Plating Product ER1600N thru ER1606N 16Ampere Heat Sink Dual Common Anode Super Fast Recovery Rectifiers 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Application Pb /hexstar2 Automotive Inverters and Solar Inverters /hexstar2 Plating Power Supply,SMPS and UPS /hexstar2 Car Audio Amplifiers and Sound Device Systems Rev.09T .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) Positive Negative Common Cathode Case Case Case Common Anode Suffix "CT" Case Series Tandem Polarity Suffix "N" Suffix "E" Doubler Tandem Polarity Suffix "D" Maximum Ratings and Electrical Characteristics A =25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 50 100 150 200 300 400 600 V RMS Reverse Voltage V R(RMS) 35 70 105 140 210 280 420 V Average Rectified Output Current @T C = 105°C I O 16 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 125 A Forward Voltage @I F = 8.0A V FM 0.95 1.3 1.7 V P e a k R e v e r s e C u r r e n t @ T A = 25°C At Rated DC Blocking Voltage @T A = 125°C I RM 500 µA Reverse Recovery Time (Note 1) t rr 35 50 nS Typical Junction Capacitance (Note 2) C j 80 60 pF Operating and Storage Temperature Range T j , T STG -65 to +150 °C ER1600N ER1601N ER1601AN ER1602N ER1603N ER1604N ER1606N
/G01/G01 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.09T 50V DC Approx
50 NI (Non-inductive)W 10 NIW
1.0 NI W Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test t rr Set time base for 5/10ns/cm +0.5A -0.25A -1.0ANotes: 2. Rise Time = 10ns max. Input Impedance = 50 . W W Fig. 5 Reverse Recovery Time Characteristic and Test Circuit (+) (+) (-) (-) 225 1 10 100 I , PEAK FORWARD SURGE CURRENT (A) FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current 8.3 ms single half-sine-wave JEDEC method 150 100 400 0.1 1.0 10 100 C , CAPACITANCE (pF) j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25 C f = 1.0MHz j ER1603N/ER1604N/ER1606N 0.1 1.0 100 0 0.6 1.2 1.8 I , INSTANTANEOUS FORWARD CURRENT (A) F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F Pulse width = 300 s 2% duty cycle m ER1600N/ER1601N/ER1601AN/ER1602N ER1606N ER1600N/ER1601N ER1601AN/ER1602N ER1603N/ER1604N /G01/G01 0 50 100 150 I , AVERAGE FORWARD CURRENT (A) (AV) T , CASE TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve C ER1600N thru ER1606N